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SUG90090E-GE3

SUG90090E-GE3

For Reference Only

Part Number SUG90090E-GE3
PNEDA Part # SUG90090E-GE3
Description MOSFET N-CH 200V 100A TO247AC
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,258
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 23 - May 28 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SUG90090E-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSUG90090E-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SUG90090E-GE3, SUG90090E-GE3 Datasheet (Total Pages: 8, Size: 186.75 KB)
PDFSUG90090E-GE3 Datasheet Cover
SUG90090E-GE3 Datasheet Page 2 SUG90090E-GE3 Datasheet Page 3 SUG90090E-GE3 Datasheet Page 4 SUG90090E-GE3 Datasheet Page 5 SUG90090E-GE3 Datasheet Page 6 SUG90090E-GE3 Datasheet Page 7 SUG90090E-GE3 Datasheet Page 8

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SUG90090E-GE3 Specifications

ManufacturerVishay Siliconix
SeriesThunderFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Rds On (Max) @ Id, Vgs9.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs129nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5220pF @ 100V
FET Feature-
Power Dissipation (Max)395W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AC
Package / CaseTO-247-3

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