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SUP60030E-GE3

SUP60030E-GE3

For Reference Only

Part Number SUP60030E-GE3
PNEDA Part # SUP60030E-GE3
Description MOSFET N-CH 80V 120A TO220AB
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 9,396
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SUP60030E-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSUP60030E-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SUP60030E-GE3, SUP60030E-GE3 Datasheet (Total Pages: 8, Size: 147.15 KB)
PDFSUP60030E-GE3 Datasheet Cover
SUP60030E-GE3 Datasheet Page 2 SUP60030E-GE3 Datasheet Page 3 SUP60030E-GE3 Datasheet Page 4 SUP60030E-GE3 Datasheet Page 5 SUP60030E-GE3 Datasheet Page 6 SUP60030E-GE3 Datasheet Page 7 SUP60030E-GE3 Datasheet Page 8

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SUP60030E-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Rds On (Max) @ Id, Vgs3.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs141nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7910pF @ 40V
FET Feature-
Power Dissipation (Max)375W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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