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SUP60N10-18P-E3

SUP60N10-18P-E3

For Reference Only

Part Number SUP60N10-18P-E3
PNEDA Part # SUP60N10-18P-E3
Description MOSFET N-CH 100V 60A TO220AB
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 8,676
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 14 - Jun 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SUP60N10-18P-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSUP60N10-18P-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SUP60N10-18P-E3, SUP60N10-18P-E3 Datasheet (Total Pages: 7, Size: 110.28 KB)
PDFSUP60N10-18P-E3 Datasheet Cover
SUP60N10-18P-E3 Datasheet Page 2 SUP60N10-18P-E3 Datasheet Page 3 SUP60N10-18P-E3 Datasheet Page 4 SUP60N10-18P-E3 Datasheet Page 5 SUP60N10-18P-E3 Datasheet Page 6 SUP60N10-18P-E3 Datasheet Page 7

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SUP60N10-18P-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)8V, 10V
Rds On (Max) @ Id, Vgs18.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs75nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2600pF @ 50V
FET Feature-
Power Dissipation (Max)3.75W (Ta), 150W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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