Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SUP70N03-09BP-E3

SUP70N03-09BP-E3

For Reference Only

Part Number SUP70N03-09BP-E3
PNEDA Part # SUP70N03-09BP-E3
Description MOSFET N-CH 30V 70A TO220AB
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,402
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 17 - Jun 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SUP70N03-09BP-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSUP70N03-09BP-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SUP70N03-09BP-E3, SUP70N03-09BP-E3 Datasheet (Total Pages: 7, Size: 361.18 KB)
PDFDFL1504S-E3/77 Datasheet Cover
DFL1504S-E3/77 Datasheet Page 2 DFL1504S-E3/77 Datasheet Page 3 DFL1504S-E3/77 Datasheet Page 4 DFL1504S-E3/77 Datasheet Page 5 DFL1504S-E3/77 Datasheet Page 6 DFL1504S-E3/77 Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SUP70N03-09BP-E3 Datasheet
  • where to find SUP70N03-09BP-E3
  • Vishay Siliconix

  • Vishay Siliconix SUP70N03-09BP-E3
  • SUP70N03-09BP-E3 PDF Datasheet
  • SUP70N03-09BP-E3 Stock

  • SUP70N03-09BP-E3 Pinout
  • Datasheet SUP70N03-09BP-E3
  • SUP70N03-09BP-E3 Supplier

  • Vishay Siliconix Distributor
  • SUP70N03-09BP-E3 Price
  • SUP70N03-09BP-E3 Distributor

SUP70N03-09BP-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs19nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1500pF @ 25V
FET Feature-
Power Dissipation (Max)93W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

The Products You May Be Interested In

TK9J90E,S1E

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

9A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.3Ohm @ 4.5A, 10V

Vgs(th) (Max) @ Id

4V @ 900µA

Gate Charge (Qg) (Max) @ Vgs

46nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2000pF @ 25V

FET Feature

-

Power Dissipation (Max)

250W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3P(N)

Package / Case

TO-3P-3, SC-65-3

IPD30N03S4L09ATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

9mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.2V @ 13µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

1520pF @ 15V

FET Feature

-

Power Dissipation (Max)

42W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IRL640L

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

17A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4V, 5V

Rds On (Max) @ Id, Vgs

180mOhm @ 10A, 5V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

66nC @ 5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

1800pF @ 25V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262-3

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

IRLBA1304

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

185A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4mOhm @ 110A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

140nC @ 4.5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

7660pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

SUPER-220™ (TO-273AA)

Package / Case

TO-273AA

STS5P3LLH6

STMicroelectronics

Manufacturer

STMicroelectronics

Series

DeepGATE™, STripFET™ H6

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

56mOhm @ 2.5A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

639pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.7W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

Recently Sold

LIS2DH12TR

LIS2DH12TR

STMicroelectronics

ACCEL 2-16G I2C/SPI 12LGA

1N4148W-7-F

1N4148W-7-F

Diodes Incorporated

DIODE GEN PURP 100V 300MA SOD123

DM74LS14M

DM74LS14M

ON Semiconductor

IC INVERTER SCHMITT 6CH 14SOIC

CM2009-00QR

CM2009-00QR

ON Semiconductor

VGA PORT COMPANION-65 OHM QSOP16

LTC3774EUHE#PBF

LTC3774EUHE#PBF

Linear Technology/Analog Devices

IC REG CTRLR BUCK 36QFN

7443556350

7443556350

Wurth Electronics

FIXED IND 3.5UH 22.5A 3.1 MOHM

LM339M

LM339M

ON Semiconductor

IC COMPARATOR QUAD 14-SOP

WSL2010R0100FEA18

WSL2010R0100FEA18

Vishay Dale

RES 0.01 OHM 1% 1W 2010

PMEG6010CEJ,115

PMEG6010CEJ,115

Nexperia

DIODE SCHOTTKY 60V 1A SOD323F

ADP2164ACPZ-1.8-R7

ADP2164ACPZ-1.8-R7

Analog Devices

IC REG BUCK 1.8V 4A 16LFCSP

XC7A75T-2FGG676I

XC7A75T-2FGG676I

Xilinx

IC FPGA 300 I/O 676FBGA

93AA66B-I/SN

93AA66B-I/SN

Microchip Technology

IC EEPROM 4K SPI 2MHZ 8SOIC