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TK100A06N1,S4X

TK100A06N1,S4X

For Reference Only

Part Number TK100A06N1,S4X
PNEDA Part # TK100A06N1-S4X
Description MOSFET N-CH 60V 100A TO-220
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 7,416
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 24 - Jun 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TK100A06N1 Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberTK100A06N1,S4X
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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TK100A06N1 Specifications

ManufacturerToshiba Semiconductor and Storage
SeriesU-MOSVIII-H
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs140nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds10500pF @ 30V
FET Feature-
Power Dissipation (Max)45W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220SIS
Package / CaseTO-220-3 Full Pack

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