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TK10A60W,S4VX

TK10A60W,S4VX

For Reference Only

Part Number TK10A60W,S4VX
PNEDA Part # TK10A60W-S4VX
Description MOSFET N-CH 600V 9.7A TO-220SIS
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 3,870
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TK10A60W Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberTK10A60W,S4VX
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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TK10A60W Specifications

ManufacturerToshiba Semiconductor and Storage
SeriesDTMOSIV
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C9.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs380mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id3.7V @ 500µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds700pF @ 300V
FET FeatureSuper Junction
Power Dissipation (Max)30W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220SIS
Package / CaseTO-220-3 Full Pack

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