TK3P50D,RQ(S
For Reference Only
Part Number | TK3P50D,RQ(S |
PNEDA Part # | TK3P50D-RQ-S |
Description | MOSFET N-CH 500V 3A DPAK-3 |
Manufacturer | Toshiba Semiconductor and Storage |
Unit Price | Request a Quote |
In Stock | 4,608 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | May 18 - May 23 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
TK3P50D Resources
Brand | Toshiba Semiconductor and Storage |
ECAD Module | |
Mfr. Part Number | TK3P50D,RQ(S |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- TK3P50D,RQ(S Datasheet
- where to find TK3P50D,RQ(S
- Toshiba Semiconductor and Storage
- Toshiba Semiconductor and Storage TK3P50D,RQ(S
- TK3P50D,RQ(S PDF Datasheet
- TK3P50D,RQ(S Stock
- TK3P50D,RQ(S Pinout
- Datasheet TK3P50D,RQ(S
- TK3P50D,RQ(S Supplier
- Toshiba Semiconductor and Storage Distributor
- TK3P50D,RQ(S Price
- TK3P50D,RQ(S Distributor
TK3P50D Specifications
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 3Ohm @ 1.5A, 10V |
Vgs(th) (Max) @ Id | 4.4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 7nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 280pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 60W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DPAK |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
The Products You May Be Interested In
ON Semiconductor Manufacturer ON Semiconductor Series UltraFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 14mOhm @ 75A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 109nC @ 20V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1775pF @ 25V FET Feature - Power Dissipation (Max) 175W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 |
Nexperia Manufacturer Nexperia USA Inc. Series Automotive, AEC-Q101, TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 61.8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 11mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs 32nC @ 5V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 2880pF @ 25V FET Feature - Power Dissipation (Max) 106W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package LFPAK56, Power-SO8 Package / Case SC-100, SOT-669 |
ON Semiconductor Manufacturer ON Semiconductor Series QFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 1.1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 9Ohm @ 550mA, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 5.5nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 150pF @ 25V FET Feature - Power Dissipation (Max) 2.5W (Ta), 25W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D-Pak Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
IXYS Manufacturer IXYS Series HiPerFET™, PolarHT™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 25A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 200mOhm @ 22A, 10V Vgs(th) (Max) @ Id 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 12000pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package ISOPLUS247™ Package / Case ISOPLUS247™ |
Infineon Technologies Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.9mOhm @ 55A, 10V Vgs(th) (Max) @ Id 2V @ 110µA Gate Charge (Qg) (Max) @ Vgs 89.7nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3320pF @ 25V FET Feature - Power Dissipation (Max) 167W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO263-3-2 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |