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TK40E10K3,S1X(S

TK40E10K3,S1X(S

For Reference Only

Part Number TK40E10K3,S1X(S
PNEDA Part # TK40E10K3-S1X-S
Description MOSFET N-CH 100V 40A TO-220AB
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 5,616
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TK40E10K3 Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberTK40E10K3,S1X(S
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
TK40E10K3, TK40E10K3 Datasheet (Total Pages: 63, Size: 1,617.96 KB)
PDFTPCP8203(TE85L Datasheet Cover
TPCP8203(TE85L Datasheet Page 2 TPCP8203(TE85L Datasheet Page 3 TPCP8203(TE85L Datasheet Page 4 TPCP8203(TE85L Datasheet Page 5 TPCP8203(TE85L Datasheet Page 6 TPCP8203(TE85L Datasheet Page 7 TPCP8203(TE85L Datasheet Page 8 TPCP8203(TE85L Datasheet Page 9 TPCP8203(TE85L Datasheet Page 10 TPCP8203(TE85L Datasheet Page 11

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TK40E10K3 Specifications

ManufacturerToshiba Semiconductor and Storage
SeriesU-MOSIV
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C40A (Ta)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs15mOhm @ 20A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs84nC @ 10V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds4000pF @ 10V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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