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TK60D08J1(Q)

TK60D08J1(Q)

For Reference Only

Part Number TK60D08J1(Q)
PNEDA Part # TK60D08J1-Q
Description MOSFET N-CH 75V 60A TO220W
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 6,858
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TK60D08J1(Q) Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberTK60D08J1(Q)
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
TK60D08J1(Q), TK60D08J1(Q) Datasheet (Total Pages: 6, Size: 210.48 KB)
PDFTK60D08J1(Q) Datasheet Cover
TK60D08J1(Q) Datasheet Page 2 TK60D08J1(Q) Datasheet Page 3 TK60D08J1(Q) Datasheet Page 4 TK60D08J1(Q) Datasheet Page 5 TK60D08J1(Q) Datasheet Page 6

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TK60D08J1(Q) Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)75V
Current - Continuous Drain (Id) @ 25°C60A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs7.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs86nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5450pF @ 10V
FET Feature-
Power Dissipation (Max)140W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220(W)
Package / CaseTO-220-3

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