TPC6006-H(TE85L,F)
For Reference Only
| Part Number | TPC6006-H(TE85L,F) |
| PNEDA Part # | TPC6006-H-TE85L-F |
| Description | MOSFET N-CH 40V 3.9A VS6 2-3T1A |
| Manufacturer | Toshiba Semiconductor and Storage |
| Unit Price | Request a Quote |
| In Stock | 8,640 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 17 - Jun 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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TPC6006-H(TE85L Resources
| Brand | Toshiba Semiconductor and Storage |
| ECAD Module |
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| Mfr. Part Number | TPC6006-H(TE85L,F) |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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TPC6006-H(TE85L Specifications
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | U-MOSIII-H |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 3.9A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 1.9A, 10V |
| Vgs(th) (Max) @ Id | 2.3V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 4.4nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 251pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | VS-6 (2.9x2.8) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
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