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TPCF8102(TE85L,F,M

TPCF8102(TE85L,F,M

For Reference Only

Part Number TPCF8102(TE85L,F,M
PNEDA Part # TPCF8102-TE85L-F-M
Description MOSFET P-CH 20V 6A VS8 2-3U1A
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 4,932
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 19 - Jun 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TPCF8102(TE85L Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberTPCF8102(TE85L,F,M
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
TPCF8102(TE85L, TPCF8102(TE85L Datasheet (Total Pages: 7, Size: 251.8 KB)
PDFTPCF8102(TE85L Datasheet Cover
TPCF8102(TE85L Datasheet Page 2 TPCF8102(TE85L Datasheet Page 3 TPCF8102(TE85L Datasheet Page 4 TPCF8102(TE85L Datasheet Page 5 TPCF8102(TE85L Datasheet Page 6 TPCF8102(TE85L Datasheet Page 7

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TPCF8102(TE85L Specifications

ManufacturerToshiba Semiconductor and Storage
SeriesU-MOSIII
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs30mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs19nC @ 5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds1550pF @ 10V
FET Feature-
Power Dissipation (Max)700mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageVS-8 (2.9x1.5)
Package / Case8-SMD, Flat Lead

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