ULN2003V12DR
For Reference Only
| Part Number | ULN2003V12DR |
| PNEDA Part # | ULN2003V12DR |
| Description | IC DARL TRANS ARRAY 7CH 16SOIC |
| Manufacturer | Texas Instruments |
| Unit Price | Request a Quote |
| In Stock | 26,682 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 8 - May 13 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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ULN2003V12DR Resources
| Brand | Texas Instruments |
| ECAD Module |
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| Mfr. Part Number | ULN2003V12DR |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Arrays |
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ULN2003V12DR Specifications
| Manufacturer | |
| Series | - |
| Transistor Type | 7 NPN Darlington |
| Current - Collector (Ic) (Max) | 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 500µA, 350mA |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Power - Max | - |
| Frequency - Transition | - |
| Operating Temperature | -40°C ~ 125°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 16-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 16-SOIC |
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Manufacturer Series - Transistor Type 7 NPN Darlington Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 1.6V @ 500µA, 350mA Current - Collector Cutoff (Max) 50µA DC Current Gain (hFE) (Min) @ Ic, Vce - Power - Max - Frequency - Transition - Operating Temperature -20°C ~ 70°C (TA) Mounting Type Surface Mount Package / Case 16-SOIC (0.209", 5.30mm Width) Supplier Device Package 16-SO |
Manufacturer Diodes Incorporated Series - Transistor Type NPN, PNP Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 400V Vce Saturation (Max) @ Ib, Ic 500mV @ 10mA, 100mA Current - Collector Cutoff (Max) - DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 200mA, 10V Power - Max 2.75W Frequency - Transition 50MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-223-8 Supplier Device Package SM8 |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type 2 PNP (Dual) Current - Collector (Ic) (Max) 150mA Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA, 6V Power - Max 200mW Frequency - Transition 80MHz Operating Temperature 125°C (TJ) Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363 Supplier Device Package US6 |
Manufacturer Rohm Semiconductor Series - Transistor Type 2 NPN (Dual) Current - Collector (Ic) (Max) 50mA Voltage - Collector Emitter Breakdown (Max) 11V Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 10mA Current - Collector Cutoff (Max) 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 56 @ 5mA, 10V Power - Max 150mW Frequency - Transition 3.2GHz Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363 Supplier Device Package UMT6 |
Manufacturer Microsemi Corporation Series Military, MIL-PRF-19500/421 Transistor Type NPN, PNP Current - Collector (Ic) (Max) 600mA Voltage - Collector Emitter Breakdown (Max) 40V Vce Saturation (Max) @ Ib, Ic 400mV @ 15mA, 150mA Current - Collector Cutoff (Max) 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V Power - Max 600mW Frequency - Transition - Operating Temperature -65°C ~ 200°C (TJ) Mounting Type Through Hole Package / Case TO-78-6 Metal Can Supplier Device Package TO-78-6 |
