US1BHE3/5AT
For Reference Only
| Part Number | US1BHE3/5AT |
| PNEDA Part # | US1BHE3-5AT |
| Description | DIODE GEN PURP 100V 1A DO214AC |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Unit Price | Request a Quote |
| In Stock | 5,994 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 13 - Jun 18 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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US1BHE3/5AT Resources
| Brand | Vishay Semiconductor Diodes Division |
| ECAD Module |
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| Mfr. Part Number | US1BHE3/5AT |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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- Orders cannot be canceled after shipping the packages.
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US1BHE3/5AT Specifications
| Manufacturer | Vishay Semiconductor Diodes Division |
| Series | - |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 100V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 1V @ 1A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50ns |
| Current - Reverse Leakage @ Vr | 10µA @ 100V |
| Capacitance @ Vr, F | 15pF @ 4V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | DO-214AC, SMA |
| Supplier Device Package | DO-214AC (SMA) |
| Operating Temperature - Junction | -55°C ~ 150°C |
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Manufacturer Central Semiconductor Corp Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) 150mA Voltage - Forward (Vf) (Max) @ If 720mV @ 5mA Speed Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr) 4ns Current - Reverse Leakage @ Vr 25nA @ 20V Capacitance @ Vr, F 4pF @ 0V, 1MHz Mounting Type Through Hole Package / Case DO-204AH, DO-35, Axial Supplier Device Package DO-35 Operating Temperature - Junction -65°C ~ 200°C |
Manufacturer ON Semiconductor Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1000V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 1.3V @ 1A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 500ns Current - Reverse Leakage @ Vr 5µA @ 1000V Capacitance @ Vr, F 15pF @ 4V, 1MHz Mounting Type Through Hole Package / Case DO-204AL, DO-41, Axial Supplier Device Package DO-204AL (DO-41) Operating Temperature - Junction -65°C ~ 175°C |
Manufacturer Infineon Technologies Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 4500V Current - Average Rectified (Io) 102A Voltage - Forward (Vf) (Max) @ If 4.5V @ 320A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 3.3µs Current - Reverse Leakage @ Vr 5mA @ 4500V Capacitance @ Vr, F - Mounting Type Stud Mount Package / Case - Supplier Device Package BG-DSW272-1 Operating Temperature - Junction 125°C (Max) |
