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US1BHE3/5AT

US1BHE3/5AT

For Reference Only

Part Number US1BHE3/5AT
PNEDA Part # US1BHE3-5AT
Description DIODE GEN PURP 100V 1A DO214AC
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 5,994
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

US1BHE3/5AT Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberUS1BHE3/5AT
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
US1BHE3/5AT, US1BHE3/5AT Datasheet (Total Pages: 5, Size: 85.17 KB)
PDFUS1GHE3/61T Datasheet Cover
US1GHE3/61T Datasheet Page 2 US1GHE3/61T Datasheet Page 3 US1GHE3/61T Datasheet Page 4 US1GHE3/61T Datasheet Page 5

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US1BHE3/5AT Specifications

ManufacturerVishay Semiconductor Diodes Division
Series-
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)100V
Current - Average Rectified (Io)1A
Voltage - Forward (Vf) (Max) @ If1V @ 1A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)50ns
Current - Reverse Leakage @ Vr10µA @ 100V
Capacitance @ Vr, F15pF @ 4V, 1MHz
Mounting TypeSurface Mount
Package / CaseDO-214AC, SMA
Supplier Device PackageDO-214AC (SMA)
Operating Temperature - Junction-55°C ~ 150°C

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