V12PM12HM3_A/I
For Reference Only
| Part Number | V12PM12HM3_A/I |
| PNEDA Part # | V12PM12HM3_A-I |
| Description | DIODE SCHOTTKY 120V 4.1A TO277A |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Unit Price | Request a Quote |
| In Stock | 2,808 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 3 - May 8 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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V12PM12HM3_A/I Resources
| Brand | Vishay Semiconductor Diodes Division |
| ECAD Module |
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| Mfr. Part Number | V12PM12HM3_A/I |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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- Some orders may require a minimum amount of $100.00.
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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V12PM12HM3_A/I Specifications
| Manufacturer | Vishay Semiconductor Diodes Division |
| Series | Automotive, AEC-Q101, eSMP®, TMBS® |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 120V |
| Current - Average Rectified (Io) | 4.1A |
| Voltage - Forward (Vf) (Max) @ If | 830mV @ 12A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 500µA @ 120V |
| Capacitance @ Vr, F | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-277, 3-PowerDFN |
| Supplier Device Package | TO-277A (SMPC) |
| Operating Temperature - Junction | -40°C ~ 150°C |
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Manufacturer Taiwan Semiconductor Corporation Series Automotive, AEC-Q101 Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 6A Voltage - Forward (Vf) (Max) @ If 1V @ 6A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 10µA @ 600V Capacitance @ Vr, F 60pF @ 4V, 1MHz Mounting Type Through Hole Package / Case R6, Axial Supplier Device Package R-6 Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer ON Semiconductor Series Automotive, AEC-Q101 Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 1200V Current - Average Rectified (Io) 15A (DC) Voltage - Forward (Vf) (Max) @ If - Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 200µA @ 1200V Capacitance @ Vr, F 612pF @ 1V, 100kHz Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247-3 Operating Temperature - Junction -55°C ~ 175°C |
Manufacturer ON Semiconductor Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 75V Current - Average Rectified (Io) 300mA Voltage - Forward (Vf) (Max) @ If 1V @ 100mA Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 4ns Current - Reverse Leakage @ Vr 5µA @ 75V Capacitance @ Vr, F 2pF @ 0V, 1MHz Mounting Type Through Hole Package / Case DO-204AH, DO-35, Axial Supplier Device Package DO-35 Operating Temperature - Junction 175°C (Max) |
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max) 1000V Current - Average Rectified (Io) 70A Voltage - Forward (Vf) (Max) @ If 1.85V @ 219.8A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 500ns Current - Reverse Leakage @ Vr 100µA @ 1000V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AB, DO-5, Stud Supplier Device Package DO-203AB Operating Temperature - Junction -40°C ~ 125°C |
