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VP2206N3-G

VP2206N3-G

For Reference Only

Part Number VP2206N3-G
PNEDA Part # VP2206N3-G
Description MOSFET P-CH 60V 640MA TO92-3
Manufacturer Microchip Technology
Unit Price Request a Quote
In Stock 18,012
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

VP2206N3-G Resources

Brand Microchip Technology
ECAD Module ECAD
Mfr. Part NumberVP2206N3-G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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VP2206N3-G Specifications

ManufacturerMicrochip Technology
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C640mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs900mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id3.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds450pF @ 25V
FET Feature-
Power Dissipation (Max)740mW (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-92-3
Package / CaseTO-226-3, TO-92-3 (TO-226AA)

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