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VS-GB100TH120N

VS-GB100TH120N

For Reference Only

Part Number VS-GB100TH120N
PNEDA Part # VS-GB100TH120N
Description IGBT 1200V 200A 833W INT-A-PAK
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 5,058
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 24 - Jun 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

VS-GB100TH120N Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberVS-GB100TH120N
CategorySemiconductorsTransistorsTransistors - IGBTs - Modules

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VS-GB100TH120N Specifications

ManufacturerVishay Semiconductor Diodes Division
Series-
IGBT Type-
ConfigurationHalf Bridge
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)200A
Power - Max833W
Vce(on) (Max) @ Vge, Ic2.35V @ 15V, 100A
Current - Collector Cutoff (Max)5mA
Input Capacitance (Cies) @ Vce8.58nF @ 25V
InputStandard
NTC ThermistorNo
Operating Temperature150°C (TJ)
Mounting TypeChassis Mount
Package / CaseDouble INT-A-PAK (3 + 4)
Supplier Device PackageDouble INT-A-PAK

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