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VS-GT100TP120N

VS-GT100TP120N

For Reference Only

Part Number VS-GT100TP120N
PNEDA Part # VS-GT100TP120N
Description IGBT 1200V 180A 652W INT-A-PAK
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 5,220
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

VS-GT100TP120N Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberVS-GT100TP120N
CategorySemiconductorsTransistorsTransistors - IGBTs - Modules
Datasheet
VS-GT100TP120N, VS-GT100TP120N Datasheet (Total Pages: 7, Size: 183.81 KB)
PDFVS-GT100TP120N Datasheet Cover
VS-GT100TP120N Datasheet Page 2 VS-GT100TP120N Datasheet Page 3 VS-GT100TP120N Datasheet Page 4 VS-GT100TP120N Datasheet Page 5 VS-GT100TP120N Datasheet Page 6 VS-GT100TP120N Datasheet Page 7

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VS-GT100TP120N Specifications

ManufacturerVishay Semiconductor Diodes Division
Series-
IGBT TypeTrench
ConfigurationHalf Bridge
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)180A
Power - Max652W
Vce(on) (Max) @ Vge, Ic2.35V @ 15V, 100A
Current - Collector Cutoff (Max)5mA
Input Capacitance (Cies) @ Vce12.8nF @ 30V
InputStandard
NTC ThermistorNo
Operating Temperature175°C (TJ)
Mounting TypeChassis Mount
Package / CaseINT-A-PAK (3 + 4)
Supplier Device PackageINT-A-PAK

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