ZVNL120CSTZ
For Reference Only
| Part Number | ZVNL120CSTZ |
| PNEDA Part # | ZVNL120CSTZ |
| Description | MOSFET N-CH 200V 0.18A TO92-3 |
| Manufacturer | Diodes Incorporated |
| Unit Price | Request a Quote |
| In Stock | 7,506 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 26 - Jul 1 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
ZVNL120CSTZ Resources
| Brand | Diodes Incorporated |
| ECAD Module |
|
| Mfr. Part Number | ZVNL120CSTZ |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- ZVNL120CSTZ Datasheet
- where to find ZVNL120CSTZ
- Diodes Incorporated
- Diodes Incorporated ZVNL120CSTZ
- ZVNL120CSTZ PDF Datasheet
- ZVNL120CSTZ Stock
- ZVNL120CSTZ Pinout
- Datasheet ZVNL120CSTZ
- ZVNL120CSTZ Supplier
- Diodes Incorporated Distributor
- ZVNL120CSTZ Price
- ZVNL120CSTZ Distributor
ZVNL120CSTZ Specifications
| Manufacturer | Diodes Incorporated |
| Series | - |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 180mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 3V, 5V |
| Rds On (Max) @ Id, Vgs | 10Ohm @ 250mA, 5V |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 85pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Operating Temperature | - |
| Mounting Type | Through Hole |
| Supplier Device Package | E-Line (TO-92 compatible) |
| Package / Case | E-Line-3 |
The Products You May Be Interested In
|
Manufacturer Microsemi Corporation Series POWER MOS V® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 112A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 19mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 495nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 11640pF @ 25V FET Feature - Power Dissipation (Max) 500W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package ISOTOP® Package / Case SOT-227-4, miniBLOC |
Manufacturer STMicroelectronics Series STripFET™ III FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 6mOhm @ 40A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 25V FET Feature - Power Dissipation (Max) 110W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer Rohm Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 235mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 2.6nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 190pF @ 10V FET Feature - Power Dissipation (Max) 1W (Ta) Operating Temperature - Mounting Type Surface Mount Supplier Device Package TSMT3 Package / Case SC-96 |
Manufacturer Infineon Technologies Series CoolMOS™ P6 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 20.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 190mOhm @ 7.6A, 10V Vgs(th) (Max) @ Id 4.5V @ 630µ Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1750pF @ 100V FET Feature - Power Dissipation (Max) 151W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3 Package / Case TO-220-3 |
Manufacturer IXYS Series Linear L2™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 240mOhm @ 15A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 335nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 10700pF @ 25V FET Feature - Power Dissipation (Max) 540W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 (IXTH) Package / Case TO-247-3 |
