ZX5T851GTA
For Reference Only
| Part Number | ZX5T851GTA |
| PNEDA Part # | ZX5T851GTA |
| Description | TRANS NPN 60V 6A SOT223 |
| Manufacturer | Diodes Incorporated |
| Unit Price | Request a Quote |
| In Stock | 155,772 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 16 - Jun 21 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
ZX5T851GTA Resources
| Brand | Diodes Incorporated |
| ECAD Module |
|
| Mfr. Part Number | ZX5T851GTA |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- ZX5T851GTA Datasheet
- where to find ZX5T851GTA
- Diodes Incorporated
- Diodes Incorporated ZX5T851GTA
- ZX5T851GTA PDF Datasheet
- ZX5T851GTA Stock
- ZX5T851GTA Pinout
- Datasheet ZX5T851GTA
- ZX5T851GTA Supplier
- Diodes Incorporated Distributor
- ZX5T851GTA Price
- ZX5T851GTA Distributor
ZX5T851GTA Specifications
| Manufacturer | Diodes Incorporated |
| Series | - |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 6A |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 260mV @ 300mA, 6A |
| Current - Collector Cutoff (Max) | 20nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 2A, 1V |
| Power - Max | 3W |
| Frequency - Transition | 130MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Supplier Device Package | SOT-223 |
The Products You May Be Interested In
|
Manufacturer STMicroelectronics Series - Transistor Type NPN Current - Collector (Ic) (Max) 3A Voltage - Collector Emitter Breakdown (Max) 60V Vce Saturation (Max) @ Ib, Ic 1.2V @ 375mA, 3A Current - Collector Cutoff (Max) 300µA DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 3A, 4V Power - Max 2W Frequency - Transition - Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB |
Manufacturer Diodes Incorporated Series - Transistor Type PNP Current - Collector (Ic) (Max) 4.5A Voltage - Collector Emitter Breakdown (Max) 12V Vce Saturation (Max) @ Ib, Ic 300mV @ 200mA, 5A Current - Collector Cutoff (Max) 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 500mA, 1V Power - Max 1.58W Frequency - Transition 80MHz Operating Temperature -55°C ~ 200°C (TJ) Mounting Type Through Hole Package / Case E-Line-3, Formed Leads Supplier Device Package E-Line (TO-92 compatible) |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 50mA Voltage - Collector Emitter Breakdown (Max) 120V Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA Current - Collector Cutoff (Max) 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1mA, 6V Power - Max 300mW Frequency - Transition 110MHz Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 |
Manufacturer Microsemi Corporation Series - Transistor Type NPN Current - Collector (Ic) (Max) 30mA Voltage - Collector Emitter Breakdown (Max) 45V Vce Saturation (Max) @ Ib, Ic 1V @ 500µA, 10mA Current - Collector Cutoff (Max) 2nA DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10µA, 5V Power - Max 300mW Frequency - Transition - Operating Temperature -55°C ~ 200°C (TJ) Mounting Type Through Hole Package / Case TO-206AA, TO-18-3 Metal Can Supplier Device Package TO-18 (TO-206AA) |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type PNP Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 1A Current - Collector Cutoff (Max) 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 500mA, 2V Power - Max 900mW Frequency - Transition 100MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 Long Body Supplier Device Package TO-92MOD |
