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ZXMHC3A01N8TC

ZXMHC3A01N8TC

For Reference Only

Part Number ZXMHC3A01N8TC
PNEDA Part # ZXMHC3A01N8TC
Description MOSFET 2N/2P-CH 30V 8-SOIC
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 18,876
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 10 - May 15 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

ZXMHC3A01N8TC Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberZXMHC3A01N8TC
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
ZXMHC3A01N8TC, ZXMHC3A01N8TC Datasheet (Total Pages: 11, Size: 721.94 KB)
PDFZXMHC3A01N8TC Datasheet Cover
ZXMHC3A01N8TC Datasheet Page 2 ZXMHC3A01N8TC Datasheet Page 3 ZXMHC3A01N8TC Datasheet Page 4 ZXMHC3A01N8TC Datasheet Page 5 ZXMHC3A01N8TC Datasheet Page 6 ZXMHC3A01N8TC Datasheet Page 7 ZXMHC3A01N8TC Datasheet Page 8 ZXMHC3A01N8TC Datasheet Page 9 ZXMHC3A01N8TC Datasheet Page 10 ZXMHC3A01N8TC Datasheet Page 11

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ZXMHC3A01N8TC Specifications

ManufacturerDiodes Incorporated
Series-
FET Type2 N and 2 P-Channel (H-Bridge)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C2.17A, 1.64A
Rds On (Max) @ Id, Vgs125mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs3.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds190pF @ 25V
Power - Max870mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOP

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