Diodes & Rectifiers

Part Number	Description	In Stock
GC10MPS12-220 GeneSiC Semiconductor	Rectifiers - Single SIC DIODE 1200V 10A TO-220-2 Manufacturer: GeneSiC Semiconductor Series: - Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 54A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 10µA @ 1200V Capacitance @ Vr, F: 660pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	In Stock10,704
GC10MPS12-252 GeneSiC Semiconductor	Rectifiers - Single SIC DIODE 1200V 10A TO-252-2 Manufacturer: GeneSiC Semiconductor Series: - Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 50A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 10µA @ 1200V Capacitance @ Vr, F: 660pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	In Stock8,676
GC15MPS12-220 GeneSiC Semiconductor	Rectifiers - Single SIC DIODE 1200V 15A TO-220-2 Manufacturer: GeneSiC Semiconductor Series: - Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 82A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 15A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 14µA @ 1200V Capacitance @ Vr, F: 1089pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	In Stock7,920
GC15MPS12-247 GeneSiC Semiconductor	Rectifiers - Single SIC DIODE 1200V 15A TO-247-2 Manufacturer: GeneSiC Semiconductor Series: - Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 75A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 15A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 14µA @ 1200V Capacitance @ Vr, F: 1089pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C	In Stock8,628
GC20MPS12-220 GeneSiC Semiconductor	Rectifiers - Single SIC DIODE 1200V 20A TO-220-2 Manufacturer: GeneSiC Semiconductor Series: - Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 94A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 18µA @ 1200V Capacitance @ Vr, F: 1298pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	In Stock7,584
GC20MPS12-247 GeneSiC Semiconductor	Rectifiers - Single SIC DIODE 1200V 20A TO-247-2 Manufacturer: GeneSiC Semiconductor Series: - Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 90A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 18µA @ 1200V Capacitance @ Vr, F: 1298pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C	In Stock6,120
GC50MPS06-247 GeneSiC Semiconductor	Rectifiers - Single SIC DIODE 650V 50A TO-247-2 Manufacturer: GeneSiC Semiconductor Series: - Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 50A (DC) Voltage - Forward (Vf) (Max) @ If: - Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: 175°C (Max)	In Stock7,308
GC50MPS12-247 GeneSiC Semiconductor	Rectifiers - Single SIC DIODE 1200V 50A TO-247-2 Manufacturer: GeneSiC Semiconductor Series: - Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 212A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 50A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 40µA @ 1200V Capacitance @ Vr, F: 3263pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C	In Stock6,504
GDP03S060C Global Power Technologies Group	Rectifiers - Single DIODE SCHOTTKY 600V 3A TO252-2 Manufacturer: Global Power Technologies Group Series: Amp+™ Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: 122pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 135°C	In Stock6,354
GDP06S060A Global Power Technologies Group	Rectifiers - Single DIODE SCHOTTKY 600V 6A TO220-2 Manufacturer: Global Power Technologies Group Series: Amp+™ Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 6A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: 243pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 135°C	In Stock2,250
GDP06S060D Global Power Technologies Group	Rectifiers - Single DIODE SCHOTTKY 600V 6A TO263-2 Manufacturer: Global Power Technologies Group Series: Amp+™ Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: 243pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 135°C	In Stock3,888
GDP08S120A Global Power Technologies Group	Rectifiers - Single DIODE SCHOTTKY 1.2KV 8A TO220-2 Manufacturer: Global Power Technologies Group Series: Amp+™ Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 100µA @ 1200V Capacitance @ Vr, F: 477pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 135°C	In Stock5,472
GDP12S060A Global Power Technologies Group	Rectifiers - Single DIODE SCHOTTKY 600V 12A TO220-2 Manufacturer: Global Power Technologies Group Series: Amp+™ Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 12A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: 487pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 135°C	In Stock6,732
GDP12S060D Global Power Technologies Group	Rectifiers - Single DIODE SCHOTTKY 600V 12A TO263-2 Manufacturer: Global Power Technologies Group Series: Amp+™ Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 12A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: 487pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 135°C	In Stock4,482
GDP15S120A Global Power Technologies Group	Rectifiers - Single DIODE SCHOTTKY 1.2KV 15A TO220-2 Manufacturer: Global Power Technologies Group Series: Amp+™ Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 15A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 15A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 100µA @ 1200V Capacitance @ Vr, F: 895pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 135°C	In Stock2,034
GDP15S120B Global Power Technologies Group	Rectifiers - Single DIODE SCHOTTKY 1200V 15A TO247-2 Manufacturer: Global Power Technologies Group Series: Amp+™ Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 15A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 15A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 100µA @ 1200V Capacitance @ Vr, F: 895pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 135°C	In Stock3,582
GDP24P060B Global Power Technologies Group	Rectifiers - Single DIODE SCHOTTKY 600V 24A TO247-2 Manufacturer: Global Power Technologies Group Series: Amp+™ Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 24A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 24A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: 973pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 135°C	In Stock2,016
GDP30P120B Global Power Technologies Group	Rectifiers - Single DIODE SCHOTTKY 1200V 81A TO247-2 Manufacturer: Global Power Technologies Group Series: Amp+™ Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 81A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 30A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 100µA @ 1200V Capacitance @ Vr, F: 1790pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 135°C	In Stock8,622
GDP30S120B Global Power Technologies Group	Rectifiers - Single DIODE SCHOTTKY 1.2KV 30A TO247-2 Manufacturer: Global Power Technologies Group Series: Amp+™ Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 30A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 30A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 100µA @ 1200V Capacitance @ Vr, F: 1790pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 135°C	In Stock7,002
GDP36Z060B Global Power Technologies Group	Rectifiers - Single DIODE SCHOTTKY 600V 36A TO247-2 Manufacturer: Global Power Technologies Group Series: Amp+™ Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 36A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 36A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: 1460pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 135°C	In Stock4,482
GDP50P120B Global Power Technologies Group	Rectifiers - Single DIODE SCHOTTKY 1.2KV 50A TO247-2 Manufacturer: Global Power Technologies Group Series: Amp+™ Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 50A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 50A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 100µA @ 1200V Capacitance @ Vr, F: 2984pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 135°C	In Stock7,146
GDP60P120B Global Power Technologies Group	Rectifiers - Single DIODE SCHOTT 1.2KV 60A TO247-2 Manufacturer: Global Power Technologies Group Series: Amp+™ Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 60A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 60A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 100µA @ 1200V Capacitance @ Vr, F: 3581pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 135°C	In Stock7,308
GDP60Z120E Global Power Technologies Group	Rectifiers - Single DIODE SCHOTT 1.2KV 60A TO247-2 Manufacturer: Global Power Technologies Group Series: Amp+™ Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 60A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 60A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 100µA @ 1200V Capacitance @ Vr, F: 3581pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 135°C	In Stock7,614
GF1A ON Semiconductor	Rectifiers - Single DIODE GEN PURP 50V 1A SMA Manufacturer: ON Semiconductor Series: - Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: -65°C ~ 175°C	In Stock62,172
GF1A/67A Vishay Semiconductor Diodes Division	Rectifiers - Single DIODE GEN PURP 50V 1A DO214BA Manufacturer: Vishay Semiconductor Diodes Division Series: SUPERECTIFIER® Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214BA Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C	In Stock8,424
GF1A-E3/67A Vishay Semiconductor Diodes Division	Rectifiers - Single DIODE GEN PURP 50V 1A DO214BA Manufacturer: Vishay Semiconductor Diodes Division Series: SUPERECTIFIER® Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214BA Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C	In Stock258,498
GF1AHE3/67A Vishay Semiconductor Diodes Division	Rectifiers - Single DIODE GEN PURP 50V 1A DO214BA Manufacturer: Vishay Semiconductor Diodes Division Series: SUPERECTIFIER® Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214BA Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C	In Stock33,804
GF1B ON Semiconductor	Rectifiers - Single DIODE GEN PURP 100V 1A SMA Manufacturer: ON Semiconductor Series: - Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: -65°C ~ 175°C	In Stock363
GF1B/17A Vishay Semiconductor Diodes Division	Rectifiers - Single DIODE GEN PURP 100V 1A DO214BA Manufacturer: Vishay Semiconductor Diodes Division Series: SUPERECTIFIER® Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214BA Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C	In Stock11,402
GF1B-E3/5CA Vishay Semiconductor Diodes Division	Rectifiers - Single DIODE GEN PURP 100V 1A DO214BA Manufacturer: Vishay Semiconductor Diodes Division Series: SUPERECTIFIER® Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214BA Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C	In Stock4,392

GC10MPS12-220

GeneSiC Semiconductor

Rectifiers - Single

SIC DIODE 1200V 10A TO-220-2

Manufacturer: GeneSiC Semiconductor
Series: -
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 54A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 10µA @ 1200V
Capacitance @ Vr, F: 660pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C

In Stock10,704

GC10MPS12-252

GeneSiC Semiconductor

Rectifiers - Single

SIC DIODE 1200V 10A TO-252-2

Manufacturer: GeneSiC Semiconductor
Series: -
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 50A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 10µA @ 1200V
Capacitance @ Vr, F: 660pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C

In Stock8,676

GC15MPS12-220

GeneSiC Semiconductor

Rectifiers - Single

SIC DIODE 1200V 15A TO-220-2

Manufacturer: GeneSiC Semiconductor
Series: -
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 82A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 15A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 14µA @ 1200V
Capacitance @ Vr, F: 1089pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C

In Stock7,920

GC15MPS12-247

GeneSiC Semiconductor

Rectifiers - Single

SIC DIODE 1200V 15A TO-247-2

Manufacturer: GeneSiC Semiconductor
Series: -
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 75A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 15A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 14µA @ 1200V
Capacitance @ Vr, F: 1089pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C

In Stock8,628

GC20MPS12-220

GeneSiC Semiconductor

Rectifiers - Single

SIC DIODE 1200V 20A TO-220-2

Manufacturer: GeneSiC Semiconductor
Series: -
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 94A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 18µA @ 1200V
Capacitance @ Vr, F: 1298pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C

In Stock7,584

GC20MPS12-247

GeneSiC Semiconductor

Rectifiers - Single

SIC DIODE 1200V 20A TO-247-2

Manufacturer: GeneSiC Semiconductor
Series: -
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 90A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 18µA @ 1200V
Capacitance @ Vr, F: 1298pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C

In Stock6,120

GC50MPS06-247

GeneSiC Semiconductor

Rectifiers - Single

SIC DIODE 650V 50A TO-247-2

Manufacturer: GeneSiC Semiconductor
Series: -
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 50A (DC)
Voltage - Forward (Vf) (Max) @ If: -
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C (Max)

In Stock7,308

GC50MPS12-247

GeneSiC Semiconductor

Rectifiers - Single

SIC DIODE 1200V 50A TO-247-2

Manufacturer: GeneSiC Semiconductor
Series: -
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 212A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 50A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 40µA @ 1200V
Capacitance @ Vr, F: 3263pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C

In Stock6,504

GDP03S060C

Global Power Technologies Group

Rectifiers - Single

DIODE SCHOTTKY 600V 3A TO252-2

Manufacturer: Global Power Technologies Group
Series: Amp+™
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 100µA @ 600V
Capacitance @ Vr, F: 122pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 135°C

In Stock6,354

GDP06S060A

Global Power Technologies Group

Rectifiers - Single

DIODE SCHOTTKY 600V 6A TO220-2

Manufacturer: Global Power Technologies Group
Series: Amp+™
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 6A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 100µA @ 600V
Capacitance @ Vr, F: 243pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 135°C

In Stock2,250

GDP06S060D

Global Power Technologies Group

Rectifiers - Single

DIODE SCHOTTKY 600V 6A TO263-2

Manufacturer: Global Power Technologies Group
Series: Amp+™
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 100µA @ 600V
Capacitance @ Vr, F: 243pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 135°C

In Stock3,888

GDP08S120A

Global Power Technologies Group

Rectifiers - Single

DIODE SCHOTTKY 1.2KV 8A TO220-2

Manufacturer: Global Power Technologies Group
Series: Amp+™
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Capacitance @ Vr, F: 477pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 135°C

In Stock5,472

GDP12S060A

Global Power Technologies Group

Rectifiers - Single

DIODE SCHOTTKY 600V 12A TO220-2

Manufacturer: Global Power Technologies Group
Series: Amp+™
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 12A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 100µA @ 600V
Capacitance @ Vr, F: 487pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 135°C

In Stock6,732

GDP12S060D

Global Power Technologies Group

Rectifiers - Single

DIODE SCHOTTKY 600V 12A TO263-2

Manufacturer: Global Power Technologies Group
Series: Amp+™
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 12A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 100µA @ 600V
Capacitance @ Vr, F: 487pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 135°C

In Stock4,482

GDP15S120A

Global Power Technologies Group

Rectifiers - Single

DIODE SCHOTTKY 1.2KV 15A TO220-2

Manufacturer: Global Power Technologies Group
Series: Amp+™
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 15A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 15A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Capacitance @ Vr, F: 895pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 135°C

In Stock2,034

GDP15S120B

Global Power Technologies Group

Rectifiers - Single

DIODE SCHOTTKY 1200V 15A TO247-2

Manufacturer: Global Power Technologies Group
Series: Amp+™
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 15A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 15A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Capacitance @ Vr, F: 895pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 135°C

In Stock3,582

GDP24P060B

Global Power Technologies Group

Rectifiers - Single

DIODE SCHOTTKY 600V 24A TO247-2

Manufacturer: Global Power Technologies Group
Series: Amp+™
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 24A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 24A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 100µA @ 600V
Capacitance @ Vr, F: 973pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 135°C

In Stock2,016

GDP30P120B

Global Power Technologies Group

Rectifiers - Single

DIODE SCHOTTKY 1200V 81A TO247-2

Manufacturer: Global Power Technologies Group
Series: Amp+™
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 81A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 30A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Capacitance @ Vr, F: 1790pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 135°C

In Stock8,622

GDP30S120B

Global Power Technologies Group

Rectifiers - Single

DIODE SCHOTTKY 1.2KV 30A TO247-2

Manufacturer: Global Power Technologies Group
Series: Amp+™
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 30A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 30A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Capacitance @ Vr, F: 1790pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 135°C

In Stock7,002

GDP36Z060B

Global Power Technologies Group

Rectifiers - Single

DIODE SCHOTTKY 600V 36A TO247-2

Manufacturer: Global Power Technologies Group
Series: Amp+™
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 36A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 36A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 100µA @ 600V
Capacitance @ Vr, F: 1460pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 135°C

In Stock4,482

GDP50P120B

Global Power Technologies Group

Rectifiers - Single

DIODE SCHOTTKY 1.2KV 50A TO247-2

Manufacturer: Global Power Technologies Group
Series: Amp+™
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 50A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 50A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Capacitance @ Vr, F: 2984pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 135°C

In Stock7,146

GDP60P120B

Global Power Technologies Group

Rectifiers - Single

DIODE SCHOTT 1.2KV 60A TO247-2

Manufacturer: Global Power Technologies Group
Series: Amp+™
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 60A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 60A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Capacitance @ Vr, F: 3581pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 135°C

In Stock7,308

GDP60Z120E

Global Power Technologies Group

Rectifiers - Single

DIODE SCHOTT 1.2KV 60A TO247-2

Manufacturer: Global Power Technologies Group
Series: Amp+™
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 60A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 60A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Capacitance @ Vr, F: 3581pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 135°C

In Stock7,614

GF1A

ON Semiconductor

Rectifiers - Single

DIODE GEN PURP 50V 1A SMA

Manufacturer: ON Semiconductor
Series: -
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA (DO-214AC)
Operating Temperature - Junction: -65°C ~ 175°C

In Stock62,172

GF1A/67A

Vishay Semiconductor Diodes Division

Rectifiers - Single

DIODE GEN PURP 50V 1A DO214BA

Manufacturer: Vishay Semiconductor Diodes Division
Series: SUPERECTIFIER®
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214BA
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C

In Stock8,424

GF1A-E3/67A

Vishay Semiconductor Diodes Division

Rectifiers - Single

DIODE GEN PURP 50V 1A DO214BA

Manufacturer: Vishay Semiconductor Diodes Division
Series: SUPERECTIFIER®
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214BA
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C

In Stock258,498

GF1AHE3/67A

Vishay Semiconductor Diodes Division

Rectifiers - Single

DIODE GEN PURP 50V 1A DO214BA

Manufacturer: Vishay Semiconductor Diodes Division
Series: SUPERECTIFIER®
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214BA
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C

In Stock33,804

GF1B

ON Semiconductor

Rectifiers - Single

DIODE GEN PURP 100V 1A SMA

Manufacturer: ON Semiconductor
Series: -
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA (DO-214AC)
Operating Temperature - Junction: -65°C ~ 175°C

In Stock363

GF1B/17A

Vishay Semiconductor Diodes Division

Rectifiers - Single

DIODE GEN PURP 100V 1A DO214BA

Manufacturer: Vishay Semiconductor Diodes Division
Series: SUPERECTIFIER®
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214BA
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C

In Stock11,402

GF1B-E3/5CA

Vishay Semiconductor Diodes Division

Rectifiers - Single

DIODE GEN PURP 100V 1A DO214BA

Manufacturer: Vishay Semiconductor Diodes Division
Series: SUPERECTIFIER®
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214BA
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C

In Stock4,392

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