Diodes & Rectifiers

Part Number	Description	In Stock
GATELEADWHRD394XXPSA1 Infineon Technologies	Rectifiers - Single STD THYR/DIODEN DISC Manufacturer: Infineon Technologies Series: - Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	In Stock7,542
GATELEADWHRD762XPSA1 Infineon Technologies	Rectifiers - Single STD THYR/DIODEN DISC Manufacturer: Infineon Technologies Series: - Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	In Stock4,446
GB01SLT06-214 GeneSiC Semiconductor	Rectifiers - Single DIODE SCHOTTKY 650V 1A DO214AA Manufacturer: GeneSiC Semiconductor Series: - Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 1A (DC) Voltage - Forward (Vf) (Max) @ If: 2V @ 1A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 10µA @ 6.5V Capacitance @ Vr, F: 76pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA Operating Temperature - Junction: -55°C ~ 175°C	In Stock25,488
GB01SLT12-214 GeneSiC Semiconductor	Rectifiers - Single DIODE SCHOTTKY 1.2KV 2.5A SMB Manufacturer: GeneSiC Semiconductor Series: - Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 2.5A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 1A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 10µA @ 1200V Capacitance @ Vr, F: 69pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB (DO-214AA) Operating Temperature - Junction: -55°C ~ 175°C	In Stock28,740
GB01SLT12-220 GeneSiC Semiconductor	Rectifiers - Single DIODE SCHOTTKY 1.2KV 1A TO220AC Manufacturer: GeneSiC Semiconductor Series: - Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 1A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 2µA @ 1200V Capacitance @ Vr, F: 69pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	In Stock14,694
GB01SLT12-252 GeneSiC Semiconductor	Rectifiers - Single DIODE SILICON 1.2KV 1A TO252 Manufacturer: GeneSiC Semiconductor Series: - Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 1A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 2µA @ 1200V Capacitance @ Vr, F: 69pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 Operating Temperature - Junction: -55°C ~ 175°C	In Stock5,418
GB02SHT01-46 GeneSiC Semiconductor	Rectifiers - Single DIODE SCHOTTKY 100V 4A Manufacturer: GeneSiC Semiconductor Series: - Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 4A (DC) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 76pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-206AB, TO-46-3 Metal Can Supplier Device Package: TO-46 Operating Temperature - Junction: -55°C ~ 210°C	In Stock6,930
GB02SHT03-46 GeneSiC Semiconductor	Rectifiers - Single DIODE SCHOTTKY 300V 4A Manufacturer: GeneSiC Semiconductor Series: - Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 4A (DC) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 5µA @ 300V Capacitance @ Vr, F: 76pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-206AB, TO-46-3 Metal Can Supplier Device Package: TO-46 Operating Temperature - Junction: -55°C ~ 225°C	In Stock7,440
GB02SHT06-46 GeneSiC Semiconductor	Rectifiers - Single DIODE SCHOTTKY 600V 4A Manufacturer: GeneSiC Semiconductor Series: - Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 4A (DC) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 76pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-206AB, TO-46-3 Metal Can Supplier Device Package: TO-46 Operating Temperature - Junction: -55°C ~ 225°C	In Stock8,478
GB02SLT06-214 GeneSiC Semiconductor	Rectifiers - Single SIC SCHOTTKY DIODE 650V 2A Manufacturer: GeneSiC Semiconductor Series: * Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	In Stock6,174
GB02SLT12-214 GeneSiC Semiconductor	Rectifiers - Single DIODE SCHOTTKY 1.2KV 2A DO214AA Manufacturer: GeneSiC Semiconductor Series: - Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 2A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 1A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 1200V Capacitance @ Vr, F: 131pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA Operating Temperature - Junction: -55°C ~ 175°C	In Stock24,702
GB02SLT12-220 GeneSiC Semiconductor	Rectifiers - Single DIODE SCHOTTKY 1.2KV 2A TO220AC Manufacturer: GeneSiC Semiconductor Series: - Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 1200V Capacitance @ Vr, F: 138pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	In Stock8,586
GB02SLT12-252 GeneSiC Semiconductor	Rectifiers - Single DIODE SIC SCHKY 1.2KV 2A TO252 Manufacturer: GeneSiC Semiconductor Series: - Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 5A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 1200V Capacitance @ Vr, F: 131pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 Operating Temperature - Junction: -55°C ~ 175°C	In Stock25,458
GB05MPS17-247 GeneSiC Semiconductor	Rectifiers - Single SIC DIODE 1700V 5A TO-247-2 Manufacturer: GeneSiC Semiconductor Series: - Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1700V Current - Average Rectified (Io): 25A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 6µA @ 1700V Capacitance @ Vr, F: 334pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C	In Stock3,528
GB05MPS33-263 GeneSiC Semiconductor	Rectifiers - Single SIC SCHOTTKY 3300V 5A TO-263-7 Manufacturer: GeneSiC Semiconductor Series: - Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 3300V Current - Average Rectified (Io): 14A (DC) Voltage - Forward (Vf) (Max) @ If: 3V @ 5A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 10µA @ 3kV Capacitance @ Vr, F: 288pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Supplier Device Package: TO-263-7 Operating Temperature - Junction: -55°C ~ 175°C	In Stock6,948
GB05SLT12-220 GeneSiC Semiconductor	Rectifiers - Single DIODE SCHOTTKY 1.2KV 5A TO220AC Manufacturer: GeneSiC Semiconductor Series: - Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 1200V Capacitance @ Vr, F: 260pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	In Stock5,724
GB05SLT12-252 GeneSiC Semiconductor	Rectifiers - Single DIODE SILICON 1.2KV 5A TO252 Manufacturer: GeneSiC Semiconductor Series: - Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 1200V Capacitance @ Vr, F: 260pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 Operating Temperature - Junction: -55°C ~ 175°C	In Stock6,804
GB10MPS17-247 GeneSiC Semiconductor	Rectifiers - Single SIC DIODE 1700V 10A TO-247-2 Manufacturer: GeneSiC Semiconductor Series: - Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1700V Current - Average Rectified (Io): 50A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 12µA @ 1700V Capacitance @ Vr, F: 669pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C	In Stock7,692
GB10SLT12-214 GeneSiC Semiconductor	Rectifiers - Single SIC SCHOTTKY DIODE 1200V 10A Manufacturer: GeneSiC Semiconductor Series: * Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	In Stock5,742
GB10SLT12-220 GeneSiC Semiconductor	Rectifiers - Single DIODE SCHOTTKY 1200V 10A TO220AC Manufacturer: GeneSiC Semiconductor Series: - Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 40µA @ 1200V Capacitance @ Vr, F: 520pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	In Stock4,680
GB10SLT12-252 GeneSiC Semiconductor	Rectifiers - Single DIODE SCHOTTKY 1.2KV 10A TO252 Manufacturer: GeneSiC Semiconductor Series: - Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 2V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 250µA @ 1200V Capacitance @ Vr, F: 520pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 Operating Temperature - Junction: -55°C ~ 175°C	In Stock7,344
GB20SLT12-247 GeneSiC Semiconductor	Rectifiers - Single DIODE SCHOTTKY 1.2KV 20A TO247AC Manufacturer: GeneSiC Semiconductor Series: - Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 2V @ 20A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 1200V Capacitance @ Vr, F: 968pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AC Operating Temperature - Junction: -55°C ~ 175°C	In Stock6,432
GB25MPS17-247 GeneSiC Semiconductor	Rectifiers - Single SIC DIODE 1700V 25A TO-247-2 Manufacturer: GeneSiC Semiconductor Series: - Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1700V Current - Average Rectified (Io): 110A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 25A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 30µA @ 1700V Capacitance @ Vr, F: 1596pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C	In Stock6,768
GB50MPS17-247 GeneSiC Semiconductor	Rectifiers - Single SIC DIODE 1700V 50A TO-247-2 Manufacturer: GeneSiC Semiconductor Series: - Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1700V Current - Average Rectified (Io): 216A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 50A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 60µA @ 1700V Capacitance @ Vr, F: 3193pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C	In Stock7,392
GB50SLT12-247 GeneSiC Semiconductor	Rectifiers - Single DIODE SCHOTTKY 1.2KV 50A TO247AC Manufacturer: GeneSiC Semiconductor Series: - Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 50A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 1mA @ 1200V Capacitance @ Vr, F: 2940pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AC Operating Temperature - Junction: -55°C ~ 175°C	In Stock6,720
GC02MPS12-220 GeneSiC Semiconductor	Rectifiers - Single SIC DIODE 1200V 2A TO-220-2 Manufacturer: GeneSiC Semiconductor Series: - Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 12A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 2µA @ 1200V Capacitance @ Vr, F: 127pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	In Stock14,394
GC05MPS12-220 GeneSiC Semiconductor	Rectifiers - Single SIC DIODE 1200V 5A TO-220-2 Manufacturer: GeneSiC Semiconductor Series: - Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 29A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 4µA @ 1200V Capacitance @ Vr, F: 359pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	In Stock3,114
GC05MPS12-252 GeneSiC Semiconductor	Rectifiers - Single SIC DIODE 1200V 5A TO-252-2 Manufacturer: GeneSiC Semiconductor Series: - Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 27A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 4µA @ 1200V Capacitance @ Vr, F: 359pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	In Stock6,858
GC08MPS12-220 GeneSiC Semiconductor	Rectifiers - Single SIC DIODE 1200V 8A TO-220-2 Manufacturer: GeneSiC Semiconductor Series: - Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 43A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 7µA @ 1200V Capacitance @ Vr, F: 545pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	In Stock18,012
GC08MPS12-252 GeneSiC Semiconductor	Rectifiers - Single SIC DIODE 1200V 8A TO-252-2 Manufacturer: GeneSiC Semiconductor Series: - Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 40A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 7µA @ 1200V Capacitance @ Vr, F: 545pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	In Stock7,218

GATELEADWHRD394XXPSA1

Infineon Technologies

Rectifiers - Single

STD THYR/DIODEN DISC

Manufacturer: Infineon Technologies
Series: -
Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

In Stock7,542

GATELEADWHRD762XPSA1

Infineon Technologies

Rectifiers - Single

STD THYR/DIODEN DISC

Manufacturer: Infineon Technologies
Series: -
Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

In Stock4,446

GB01SLT06-214

GeneSiC Semiconductor

Rectifiers - Single

DIODE SCHOTTKY 650V 1A DO214AA

Manufacturer: GeneSiC Semiconductor
Series: -
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 1A (DC)
Voltage - Forward (Vf) (Max) @ If: 2V @ 1A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 10µA @ 6.5V
Capacitance @ Vr, F: 76pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA
Operating Temperature - Junction: -55°C ~ 175°C

In Stock25,488

GB01SLT12-214

GeneSiC Semiconductor

Rectifiers - Single

DIODE SCHOTTKY 1.2KV 2.5A SMB

Manufacturer: GeneSiC Semiconductor
Series: -
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 2.5A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 1A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 10µA @ 1200V
Capacitance @ Vr, F: 69pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB (DO-214AA)
Operating Temperature - Junction: -55°C ~ 175°C

In Stock28,740

GB01SLT12-220

GeneSiC Semiconductor

Rectifiers - Single

DIODE SCHOTTKY 1.2KV 1A TO220AC

Manufacturer: GeneSiC Semiconductor
Series: -
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 1A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 2µA @ 1200V
Capacitance @ Vr, F: 69pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

In Stock14,694

GB01SLT12-252

GeneSiC Semiconductor

Rectifiers - Single

DIODE SILICON 1.2KV 1A TO252

Manufacturer: GeneSiC Semiconductor
Series: -
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 1A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 2µA @ 1200V
Capacitance @ Vr, F: 69pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 175°C

In Stock5,418

GB02SHT01-46

GeneSiC Semiconductor

Rectifiers - Single

DIODE SCHOTTKY 100V 4A

Manufacturer: GeneSiC Semiconductor
Series: -
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 4A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 76pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-206AB, TO-46-3 Metal Can
Supplier Device Package: TO-46
Operating Temperature - Junction: -55°C ~ 210°C

In Stock6,930

GB02SHT03-46

GeneSiC Semiconductor

Rectifiers - Single

DIODE SCHOTTKY 300V 4A

Manufacturer: GeneSiC Semiconductor
Series: -
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 4A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: 76pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-206AB, TO-46-3 Metal Can
Supplier Device Package: TO-46
Operating Temperature - Junction: -55°C ~ 225°C

In Stock7,440

GB02SHT06-46

GeneSiC Semiconductor

Rectifiers - Single

DIODE SCHOTTKY 600V 4A

Manufacturer: GeneSiC Semiconductor
Series: -
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 4A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 76pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-206AB, TO-46-3 Metal Can
Supplier Device Package: TO-46
Operating Temperature - Junction: -55°C ~ 225°C

In Stock8,478

GB02SLT06-214

GeneSiC Semiconductor

Rectifiers - Single

SIC SCHOTTKY DIODE 650V 2A

Manufacturer: GeneSiC Semiconductor
Series: *
Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

In Stock6,174

GB02SLT12-214

GeneSiC Semiconductor

Rectifiers - Single

DIODE SCHOTTKY 1.2KV 2A DO214AA

Manufacturer: GeneSiC Semiconductor
Series: -
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 2A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 1A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 1200V
Capacitance @ Vr, F: 131pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA
Operating Temperature - Junction: -55°C ~ 175°C

In Stock24,702

GB02SLT12-220

GeneSiC Semiconductor

Rectifiers - Single

DIODE SCHOTTKY 1.2KV 2A TO220AC

Manufacturer: GeneSiC Semiconductor
Series: -
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 1200V
Capacitance @ Vr, F: 138pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

In Stock8,586

GB02SLT12-252

GeneSiC Semiconductor

Rectifiers - Single

DIODE SIC SCHKY 1.2KV 2A TO252

Manufacturer: GeneSiC Semiconductor
Series: -
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 5A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 1200V
Capacitance @ Vr, F: 131pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 175°C

In Stock25,458

GB05MPS17-247

GeneSiC Semiconductor

Rectifiers - Single

SIC DIODE 1700V 5A TO-247-2

Manufacturer: GeneSiC Semiconductor
Series: -
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1700V
Current - Average Rectified (Io): 25A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 6µA @ 1700V
Capacitance @ Vr, F: 334pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C

In Stock3,528

GB05MPS33-263

GeneSiC Semiconductor

Rectifiers - Single

SIC SCHOTTKY 3300V 5A TO-263-7

Manufacturer: GeneSiC Semiconductor
Series: -
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 3300V
Current - Average Rectified (Io): 14A (DC)
Voltage - Forward (Vf) (Max) @ If: 3V @ 5A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 10µA @ 3kV
Capacitance @ Vr, F: 288pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Supplier Device Package: TO-263-7
Operating Temperature - Junction: -55°C ~ 175°C

In Stock6,948

GB05SLT12-220

GeneSiC Semiconductor

Rectifiers - Single

DIODE SCHOTTKY 1.2KV 5A TO220AC

Manufacturer: GeneSiC Semiconductor
Series: -
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 1200V
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

In Stock5,724

GB05SLT12-252

GeneSiC Semiconductor

Rectifiers - Single

DIODE SILICON 1.2KV 5A TO252

Manufacturer: GeneSiC Semiconductor
Series: -
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 1200V
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 175°C

In Stock6,804

GB10MPS17-247

GeneSiC Semiconductor

Rectifiers - Single

SIC DIODE 1700V 10A TO-247-2

Manufacturer: GeneSiC Semiconductor
Series: -
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1700V
Current - Average Rectified (Io): 50A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 12µA @ 1700V
Capacitance @ Vr, F: 669pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C

In Stock7,692

GB10SLT12-214

GeneSiC Semiconductor

Rectifiers - Single

SIC SCHOTTKY DIODE 1200V 10A

Manufacturer: GeneSiC Semiconductor
Series: *
Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

In Stock5,742

GB10SLT12-220

GeneSiC Semiconductor

Rectifiers - Single

DIODE SCHOTTKY 1200V 10A TO220AC

Manufacturer: GeneSiC Semiconductor
Series: -
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 40µA @ 1200V
Capacitance @ Vr, F: 520pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

In Stock4,680

GB10SLT12-252

GeneSiC Semiconductor

Rectifiers - Single

DIODE SCHOTTKY 1.2KV 10A TO252

Manufacturer: GeneSiC Semiconductor
Series: -
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 2V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 250µA @ 1200V
Capacitance @ Vr, F: 520pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 175°C

In Stock7,344

GB20SLT12-247

GeneSiC Semiconductor

Rectifiers - Single

DIODE SCHOTTKY 1.2KV 20A TO247AC

Manufacturer: GeneSiC Semiconductor
Series: -
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 2V @ 20A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 200µA @ 1200V
Capacitance @ Vr, F: 968pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 175°C

In Stock6,432

GB25MPS17-247

GeneSiC Semiconductor

Rectifiers - Single

SIC DIODE 1700V 25A TO-247-2

Manufacturer: GeneSiC Semiconductor
Series: -
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1700V
Current - Average Rectified (Io): 110A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 25A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 30µA @ 1700V
Capacitance @ Vr, F: 1596pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C

In Stock6,768

GB50MPS17-247

GeneSiC Semiconductor

Rectifiers - Single

SIC DIODE 1700V 50A TO-247-2

Manufacturer: GeneSiC Semiconductor
Series: -
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1700V
Current - Average Rectified (Io): 216A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 50A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 60µA @ 1700V
Capacitance @ Vr, F: 3193pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C

In Stock7,392

GB50SLT12-247

GeneSiC Semiconductor

Rectifiers - Single

DIODE SCHOTTKY 1.2KV 50A TO247AC

Manufacturer: GeneSiC Semiconductor
Series: -
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 50A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 50A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 1mA @ 1200V
Capacitance @ Vr, F: 2940pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 175°C

In Stock6,720

GC02MPS12-220

GeneSiC Semiconductor

Rectifiers - Single

SIC DIODE 1200V 2A TO-220-2

Manufacturer: GeneSiC Semiconductor
Series: -
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 12A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 2µA @ 1200V
Capacitance @ Vr, F: 127pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C

In Stock14,394

GC05MPS12-220

GeneSiC Semiconductor

Rectifiers - Single

SIC DIODE 1200V 5A TO-220-2

Manufacturer: GeneSiC Semiconductor
Series: -
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 29A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 4µA @ 1200V
Capacitance @ Vr, F: 359pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C

In Stock3,114

GC05MPS12-252

GeneSiC Semiconductor

Rectifiers - Single

SIC DIODE 1200V 5A TO-252-2

Manufacturer: GeneSiC Semiconductor
Series: -
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 27A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 4µA @ 1200V
Capacitance @ Vr, F: 359pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C

In Stock6,858

GC08MPS12-220

GeneSiC Semiconductor

Rectifiers - Single

SIC DIODE 1200V 8A TO-220-2

Manufacturer: GeneSiC Semiconductor
Series: -
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 43A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 7µA @ 1200V
Capacitance @ Vr, F: 545pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C

In Stock18,012

GC08MPS12-252

GeneSiC Semiconductor

Rectifiers - Single

SIC DIODE 1200V 8A TO-252-2

Manufacturer: GeneSiC Semiconductor
Series: -
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 40A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 7µA @ 1200V
Capacitance @ Vr, F: 545pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C

In Stock7,218

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