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CategorySemiconductors / Memory ICs / Memory
Records 46,590
Page 542/1553
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Memory Type | Memory Format | Technology | Memory Size | Memory Interface | Clock Frequency | Write Cycle Time - Word, Page | Access Time | Voltage - Supply | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Cypress Semiconductor |
IC FRAM 2M SPI 40MHZ 8TDFN |
3,598 |
|
F-RAM™ | Non-Volatile | FRAM | FRAM (Ferroelectric RAM) | 2Mb (256K x 8) | SPI | 40MHz | - | - | 2V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 8-WDFN Exposed Pad | 8-TDFN (5x6) |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 32K PARALLEL 52PLCC |
6,048 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 32Kb (4K x 8) | Parallel | - | 70ns | 70ns | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | Surface Mount | 52-LCC (J-Lead) | 52-PLCC (19.13x19.13) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 90TFBGA |
3,544 |
|
- | Volatile | DRAM | SDRAM | 512Mb (16M x 32) | Parallel | 166MHz | - | 5.4ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 54TFBGA |
8,496 |
|
- | Volatile | DRAM | SDRAM | 512Mb (32M x 16) | Parallel | 167MHz | - | 5.4ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 54-TFBGA | 54-TFBGA (8x13) |
|
|
|
Cypress Semiconductor |
IC NVSRAM 256K PARALLEL 32SOIC |
3,420 |
|
- | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 256Kb (32K x 8) | Parallel | - | 45ns | 45ns | 4.5V ~ 5.5V | -40°C ~ 105°C (TA) | Surface Mount | 32-SOIC (0.295", 7.50mm Width) | 32-SOIC |
|
|
|
Micron Technology Inc. |
IC DRAM 8G 1866MHZ |
3,222 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR4 | 8Gb (256M x 32) | - | 1866MHz | - | - | 1.1V | -30°C ~ 85°C (TC) | Surface Mount | 200-WFBGA | 200-WFBGA (10x14.5) |
|
|
|
Micron Technology Inc. |
IC DRAM 8G 1600MHZ FBGA |
2,772 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR4 | 8Gb (256M x 32) | - | 1600MHz | - | - | 1.1V | -30°C ~ 85°C (TC) | Surface Mount | 200-WFBGA | 200-WFBGA (10x14.5) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 4G PARALLEL 96TWBGA |
2,806 |
|
- | Volatile | DRAM | SDRAM - DDR3L | 4Gb (256M x 16) | Parallel | 800MHz | 15ns | 20ns | 1.283V ~ 1.45V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
|
|
|
Micron Technology Inc. |
IC FLASH RAM 2G PARALLEL 533MHZ |
5,184 |
|
- | Non-Volatile | FLASH, RAM | FLASH - NAND, DRAM - LPDDR2 | 2Gb (256M x 8)(NAND), 2G (64M x 32)(LPDDR2) | Parallel | 533MHz | - | - | 1.8V | -40°C ~ 85°C (TA) | Surface Mount | 162-VFBGA | 162-VFBGA (10.5x8) |
|
|
|
Cypress Semiconductor |
IC NOR |
2,106 |
|
Automotive, AEC-Q100, FL-S | Non-Volatile | FLASH | FLASH - NOR | 1Gb (128M x 8) | SPI - Quad I/O | 133MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
|
|
|
Maxim Integrated |
IC NVSRAM 16K PARALLEL 24EDIP |
7,758 |
|
- | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 16Kb (2K x 8) | Parallel | - | 100ns | 100ns | 4.75V ~ 5.25V | -40°C ~ 85°C (TA) | Through Hole | 24-DIP Module (0.600", 15.24mm) | 24-EDIP |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 60TWBGA |
6,480 |
|
- | Volatile | DRAM | SDRAM - DDR2 | 2Gb (256M x 8) | Parallel | 333MHz | 15ns | 450ps | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Surface Mount | 60-TFBGA | 60-TWBGA (8x10.5) |
|
|
|
Micron Technology Inc. |
IC FLASH 64G MMC |
6,822 |
|
e•MMC™ | Non-Volatile | FLASH | FLASH - NAND | 64Gb (8G x 8) | MMC | - | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 100-LBGA | 100-LBGA (14x18) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 90TFBGA |
6,642 |
|
- | Volatile | DRAM | SDRAM | 512Mb (16M x 32) | Parallel | 143MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
|
|
|
Micron Technology Inc. |
IC DRAM 8G PARALLEL 1.6GHZ |
2,898 |
|
- | Volatile | DRAM | SDRAM - DDR4 | 8Gb (1G x 8) | Parallel | 1.6GHz | - | - | 1.14V ~ 1.26V | -40°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | 78-FBGA (7.5x11) |
|
|
|
Micron Technology Inc. |
IC DRAM 4G PARALLEL 96FBGA |
4,266 |
|
- | Volatile | DRAM | SDRAM - DDR4 | 4Gb (256M x 16) | Parallel | 1.6GHz | - | 13.75ns | 1.14V ~ 1.26V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-FBGA (7.5x13.5) |
|
|
|
Cypress Semiconductor |
IC FLASH RAM 512MIT PAR 24FBGA |
6,192 |
|
HyperFlash™ + HyperRAM™ KL | Non-Volatile | FLASH, RAM | FLASH, DRAM | 512Mbit Flash, 64Mbit RAM | Parallel | 100MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 24-VBGA | 24-FBGA (6x8) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 90TFBGA |
8,154 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR | 512Mb (16M x 32) | Parallel | 166MHz | 12ns | 5.5ns | 1.7V ~ 1.95V | -40°C ~ 105°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 86TSOP II |
3,204 |
|
- | Volatile | DRAM | SDRAM | 512Mb (16M x 32) | Parallel | 143MHz | - | 5.4ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 86-TFSOP (0.400", 10.16mm Width) | 86-TSOP II |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 54TSOP |
2,016 |
|
- | Volatile | DRAM | SDRAM | 512Mb (64M x 8) | Parallel | 143MHz | - | 5.4ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 8M PARALLEL 44TSOP II |
6,354 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 8Mb (1M x 8) | Parallel | - | 10ns | 10ns | 2.4V ~ 3.6V | -40°C ~ 125°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 8M PARALLEL 44TSOP II |
6,156 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 8Mb (512K x 16) | Parallel | - | 10ns | 10ns | 2.4V ~ 3.6V | -40°C ~ 125°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 54TSOP |
6,822 |
|
- | Volatile | DRAM | SDRAM | 512Mb (32M x 16) | Parallel | 143MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
|
|
|
Micron Technology Inc. |
IC DRAM 8G PARALLEL 1.6GHZ |
3,096 |
|
- | Volatile | DRAM | SDRAM - DDR4 | 8Gb (1G x 8) | Parallel | 1.6GHz | - | - | 1.14V ~ 1.26V | -40°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | 78-FBGA (7.5x11) |
|
|
|
Micron Technology Inc. |
IC DRAM 4G PARALLEL 96FBGA |
5,004 |
|
- | Volatile | DRAM | SDRAM - DDR4 | 4Gb (256M x 16) | Parallel | 1.6GHz | - | 13.75ns | 1.14V ~ 1.26V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-FBGA (7.5x13.5) |
|
|
|
Cypress Semiconductor |
IC SRAM 16M PARALLEL |
6,192 |
|
MoBL® | Volatile | SRAM | SRAM - Asynchronous | 16Mb (2M x 8, 1M x 16) | Parallel | - | 55ns | 55ns | 1.65V ~ 2.2V | -40°C ~ 85°C (TA) | Surface Mount | 48-VFBGA | 48-VFBGA (6x8) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 96TWBGA |
5,616 |
|
- | Volatile | DRAM | SDRAM - DDR3 | 2Gb (128M x 16) | Parallel | 800MHz | 15ns | 20ns | 1.283V ~ 1.45V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
|
|
|
Alliance Memory, Inc. |
IC DRAM 512M PARALLEL 54TSOP |
6,876 |
|
- | Volatile | DRAM | SDRAM | 512Mb (32M x 16) | Parallel | 143MHz | 2ns | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 54TSOP |
2,023 |
|
- | Volatile | DRAM | SDRAM | 512Mb (32M x 16) | Parallel | 166MHz | - | 5.4ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
|
|
|
Micron Technology Inc. |
TLC 256G 32GX8 VBGA |
3,888 |
|
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