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CategorySemiconductors / Memory ICs / Memory
Records 46,590
Page 544/1553
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Memory Type | Memory Format | Technology | Memory Size | Memory Interface | Clock Frequency | Write Cycle Time - Word, Page | Access Time | Voltage - Supply | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microchip Technology |
IC EEPROM 512K SPI 20MHZ 8SOIC |
2,538 |
|
- | Non-Volatile | EEPROM | EEPROM | 512Kb (64K x 8) | SPI | 20MHz | 5ms | - | 2.5V ~ 5.5V | -55°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 90TFBGA |
5,688 |
|
- | Volatile | DRAM | SDRAM | 512Mb (16M x 32) | Parallel | 167MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 4M PARALLEL 100TQFP |
8,082 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 4Mb (128K x 32) | Parallel | 117MHz | - | 7.5ns | 3.135V ~ 3.465V | -40°C ~ 125°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 4M PARALLEL 100TQFP |
5,238 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 4Mb (128K x 32) | Parallel | 200MHz | - | 3.1ns | 3.135V ~ 3.465V | -40°C ~ 125°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 4M PARALLEL 100LQFP |
4,086 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 4Mb (128K x 32) | Parallel | 117MHz | - | 7.5ns | 2.375V ~ 2.625V | -40°C ~ 125°C (TA) | Surface Mount | 100-LQFP | 100-LQFP (14x20) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 86TSOP II |
4,932 |
|
- | Volatile | DRAM | SDRAM | 512Mb (16M x 32) | Parallel | 167MHz | - | 5.4ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 86-TFSOP (0.400", 10.16mm Width) | 86-TSOP II |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 54TSOP |
5,508 |
|
- | Volatile | DRAM | SDRAM | 512Mb (64M x 8) | Parallel | 166MHz | - | 5.4ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 54TSOP |
5,076 |
|
- | Volatile | DRAM | SDRAM | 512Mb (32M x 16) | Parallel | 167MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 96TWBGA |
4,788 |
|
- | Volatile | DRAM | SDRAM - DDR3 | 2Gb (128M x 16) | Parallel | 800MHz | 15ns | 20ns | 1.283V ~ 1.45V | -40°C ~ 105°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
|
|
|
Everspin Technologies Inc. |
IC RAM 1M PARALLEL 44TSOP2 |
3,600 |
|
- | Non-Volatile | RAM | MRAM (Magnetoresistive RAM) | 1Mb (64K x 16) | Parallel | - | 35ns | 35ns | 3V ~ 3.6V | -40°C ~ 125°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP2 |
|
|
|
Micron Technology Inc. |
IC DRAM 8G PARALLEL 1.33GHZ |
6,030 |
|
- | Volatile | DRAM | SDRAM - DDR4 | 8Gb (2G x 4) | Parallel | 1.33GHz | - | - | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | 78-FBGA (7.5x11) |
|
|
|
Micron Technology Inc. |
IC DRAM 2G PARALLEL 84FBGA |
8,118 |
|
- | Volatile | DRAM | SDRAM - DDR2 | 2Gb (128M x 16) | Parallel | 400MHz | 15ns | 400ps | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Surface Mount | 84-TFBGA | 84-FBGA (9x12.5) |
|
|
|
Micron Technology Inc. |
IC DRAM 2G PARALLEL 60FBGA |
7,848 |
|
- | Volatile | DRAM | SDRAM - DDR2 | 2Gb (256M x 8) | Parallel | 400MHz | 15ns | 400ps | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Surface Mount | 60-TFBGA | 60-FBGA (9x11.5) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 54TSOP |
5,580 |
|
- | Volatile | DRAM | SDRAM | 512Mb (32M x 16) | Parallel | 143MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
|
|
|
Cypress Semiconductor |
IC 1 GB FLASH MEMORY |
3,276 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Cypress Semiconductor |
IC NOR |
8,028 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Everspin Technologies Inc. |
IC RAM 1M PARALLEL 44TSOP2 |
6,660 |
|
- | Non-Volatile | RAM | MRAM (Magnetoresistive RAM) | 1Mb (64K x 16) | Parallel | - | 35ns | 35ns | 3V ~ 3.6V | -40°C ~ 125°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP2 |
|
|
|
Maxim Integrated |
IC NVSRAM 16K PARALLEL 24EDIP |
5,940 |
|
- | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 16Kb (2K x 8) | Parallel | - | 200ns | 200ns | 4.75V ~ 5.25V | -40°C ~ 85°C (TA) | Through Hole | 24-DIP Module (0.600", 15.24mm) | 24-EDIP |
|
|
|
Alliance Memory, Inc. |
IC DRAM 512M PARALLEL 54FBGA |
7,704 |
|
- | Volatile | DRAM | SDRAM | 512Mb (32M x 16) | Parallel | 143MHz | 2ns | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TFBGA | 54-FBGA (8x8) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 4G PARALLEL 96TWBGA |
3,510 |
|
- | Volatile | DRAM | SDRAM - DDR3L | 4Gb (256M x 16) | Parallel | 933MHz | 15ns | 20ns | 1.283V ~ 1.45V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
|
|
|
Micron Technology Inc. |
IC DRAM 8G PARALLEL 1.33GHZ |
7,488 |
|
- | Volatile | DRAM | SDRAM - DDR4 | 8Gb (2G x 4) | Parallel | 1.33GHz | - | - | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | 78-FBGA (7.5x11) |
|
|
|
Cypress Semiconductor |
IC NOR |
2,970 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Cypress Semiconductor |
IC 1 GB FLASH MEMORY |
3,204 |
|
* | - | - | - | - | - | - | - | - | - | - | Surface Mount | 64-LBGA | 64-FBGA (13x11) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 60TWBGA |
3,996 |
|
- | Volatile | DRAM | SDRAM - DDR2 | 2Gb (256M x 8) | Parallel | 400MHz | 15ns | 400ps | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Surface Mount | 60-TFBGA | 60-TWBGA (8x10.5) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 8M PARALLEL 48MINIBGA |
7,614 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 8Mb (1M x 8) | Parallel | - | 10ns | 10ns | 2.4V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFBGA | 48-miniBGA (9x11) |
|
|
|
Cypress Semiconductor |
IC SRAM 9M PARALLEL 133MHZ |
3,654 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (256K x 36) | Parallel | 133MHz | - | 6.5ns | 3.135V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 90TFBGA |
4,968 |
|
- | Volatile | DRAM | SDRAM | 512Mb (16M x 32) | Parallel | 133MHz | - | 6ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
|
|
|
Micron Technology Inc. |
IC DRAM 4G PARALLEL 96FBGA |
3,762 |
|
- | Volatile | DRAM | SDRAM - DDR4 | 4Gb (256M x 16) | Parallel | 1.6GHz | 15ns | 19ns | 1.14V ~ 1.26V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-FBGA (7.5x13.5) |
|
|
|
Micron Technology Inc. |
IC FLASH RAM 4G PARALLEL 533MHZ |
6,354 |
|
- | Non-Volatile | FLASH, RAM | FLASH - NAND, DRAM - LPDDR2 | 4Gb (256M x 16)(NAND), 4G (128M x 32)(LPDDR2) | Parallel | 533MHz | - | - | 1.8V | -25°C ~ 85°C (TA) | - | - | - |
|
|
|
Micron Technology Inc. |
IC FLASH 64G MMC |
2,592 |
|
e•MMC™ | Non-Volatile | FLASH | FLASH - NAND | 64Gb (8G x 8) | MMC | - | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 153-TFBGA | 153-TFBGA (11.5x13) |