Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
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Transistors - Bipolar (BJT) - Single (13,715)
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Transistors - FETs, MOSFETs - Arrays (3,829)
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Transistors - IGBTs - Modules (2,367)
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Transistors - Special Purpose (162)

Records 64,903

Page 1213/2164

Part Number	Description	In Stock
FKI10198 Sanken	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 31A TO-220F Manufacturer: Sanken Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 17.8mOhm @ 23.4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 55.8nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3990pF @ 25V FET Feature: - Power Dissipation (Max): 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	In Stock4,662
FKI10300 Sanken	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 23A TO-220F Manufacturer: Sanken Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 27.9mOhm @ 17.1A, 10V Vgs(th) (Max) @ Id: 2.5V @ 650µA Gate Charge (Qg) (Max) @ Vgs: 35.8nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2540pF @ 25V FET Feature: - Power Dissipation (Max): 38W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	In Stock8,730
FKI10531 Sanken	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 18A TO-220F Manufacturer: Sanken Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 48mOhm @ 11.9A, 10V Vgs(th) (Max) @ Id: 2.5V @ 350µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1530pF @ 25V FET Feature: - Power Dissipation (Max): 32W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	In Stock5,238
FKP202 Sanken	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 45A TO-220F Manufacturer: Sanken Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 53mOhm @ 22A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V FET Feature: - Power Dissipation (Max): 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3 Full Pack	In Stock8,622
FKP250A Sanken	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 50A TO-3PF Manufacturer: Sanken Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 50A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 43mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 25V FET Feature: - Power Dissipation (Max): 85W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3 Full Pack	In Stock5,400
FKP252 Sanken	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 25A TO-220F Manufacturer: Sanken Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 75mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V FET Feature: - Power Dissipation (Max): 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	In Stock3,276
FKP253 Sanken	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 20A TO-220F Manufacturer: Sanken Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 95mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V FET Feature: - Power Dissipation (Max): 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3 Full Pack	In Stock8,550
FKP280A Sanken	Transistors - FETs, MOSFETs - Single MOSFET N-CH 280V 40A TO-3PF Manufacturer: Sanken Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 280V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 25V FET Feature: - Power Dissipation (Max): 85W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	In Stock7,236
FKP300A Sanken	Transistors - FETs, MOSFETs - Single MOSFET N-CH 300V 30A TO-3PF Manufacturer: Sanken Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 25V FET Feature: - Power Dissipation (Max): 85W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	In Stock8,514
FKP330C Sanken	Transistors - FETs, MOSFETs - Single MOSFET N-CH 330V 30A TO-3PF Manufacturer: Sanken Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 330V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 63mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V FET Feature: - Power Dissipation (Max): 85W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3 Full Pack	In Stock2,736
FKV550N Sanken	Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V 50A TO-220F Manufacturer: Sanken Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 50A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V FET Feature: - Power Dissipation (Max): 35W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	In Stock4,410
FKV550T Sanken	Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V 50A TO-220F Manufacturer: Sanken Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 50A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 13mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 10V FET Feature: - Power Dissipation (Max): 35W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	In Stock8,982
FKV575 Sanken	Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V 75A TO-220F Manufacturer: Sanken Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 75A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 10mOhm @ 37A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 10V FET Feature: - Power Dissipation (Max): 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3 Full Pack	In Stock33,036
FL5252050R Panasonic Electronic Components	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 2.1A SC-74A Manufacturer: Panasonic Electronic Components Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Rds On (Max) @ Id, Vgs: 130mOhm @ 1A, 4V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V FET Feature: - Power Dissipation (Max): 600mW (Ta) Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Mini5-G3-B Package / Case: SC-74A, SOT-753	In Stock6,012
FL6L52010L Panasonic Electronic Components	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 2A WSSMINI6 Manufacturer: Panasonic Electronic Components Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8 V, 4V Rds On (Max) @ Id, Vgs: 120mOhm @ 1A, 4V Vgs(th) (Max) @ Id: 1.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V FET Feature: - Power Dissipation (Max): 540mW (Ta) Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: WSSMini6-F1 Package / Case: 6-SMD, Flat Leads	In Stock3,852
FL6L52030L Panasonic Electronic Components	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 1A MINI6-F1 Manufacturer: Panasonic Electronic Components Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Rds On (Max) @ Id, Vgs: 420mOhm @ 500mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 540mW (Ta) Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: WSSMini6-F1 Package / Case: 6-SMD, Flat Leads	In Stock8,442
FL6L52060L Panasonic Electronic Components	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 2A MINI6-F1 Manufacturer: Panasonic Electronic Components Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8 V, 4V Rds On (Max) @ Id, Vgs: 120mOhm @ 1A, 4V Vgs(th) (Max) @ Id: 1.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 540mW (Ta) Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: WSSMini6-F1 Package / Case: 6-SMD, Flat Leads	In Stock2,736
FL6L52070L Panasonic Electronic Components	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 1A MINI6-F1 Manufacturer: Panasonic Electronic Components Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Rds On (Max) @ Id, Vgs: 420mOhm @ 500mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 540mW (Ta) Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: WSSMini6-F1 Package / Case: 6-SMD, Flat Leads	In Stock8,820
FM6K62010L Panasonic Electronic Components	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 2A SC113DA Manufacturer: Panasonic Electronic Components Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Rds On (Max) @ Id, Vgs: 105mOhm @ 1A, 4V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 700mW (Ta) Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: WSMini6-F1-B Package / Case: 6-SMD, Flat Leads	In Stock6,840
FM6L52020L Panasonic Electronic Components	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 2.2A MINI6-F1 Manufacturer: Panasonic Electronic Components Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Rds On (Max) @ Id, Vgs: 105mOhm @ 1A, 4V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V FET Feature: - Power Dissipation (Max): 540mW (Ta) Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: WSSMini6-F1 Package / Case: 6-SMD, Flat Leads	In Stock6,228
FMD15-06KC5 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 15A I4-PAC-5 Manufacturer: IXYS Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3.5V @ 790µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 100V FET Feature: - Power Dissipation (Max): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS i4-PAC™ Package / Case: ISOPLUSi5-Pak™	In Stock5,598
FMD21-05QC IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 21A I4-PAC-5 Manufacturer: IXYS Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 220mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS i4-PAC™ Package / Case: i4-Pac™-5	In Stock8,442
FMD40-06KC IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 38A I4-PAC-5 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3.9V @ 2.7mA Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: Super Junction Power Dissipation (Max): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS i4-PAC™ Package / Case: i4-Pac™-5	In Stock5,112
FMD47-06KC5 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 47A I4-PAC-5 Manufacturer: IXYS Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V Vgs(th) (Max) @ Id: 3.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V FET Feature: - Power Dissipation (Max): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS i4-PAC™ Package / Case: ISOPLUSi5-Pak™	In Stock7,956
FMD80-0045PS IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 150A I4-PAC-5 Manufacturer: IXYS Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.9mOhm @ 110A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS i4-PAC™ Package / Case: i4-Pac™-5	In Stock3,078
FQ7N10 MICROSS/On Semiconductor	Transistors - FETs, MOSFETs - Single DIE MOSFET N-CH 100V Manufacturer: MICROSS/On Semiconductor Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock7,290
FQA10N60C ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 10A TO-3P Manufacturer: ON Semiconductor Series: QFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 730mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 25V FET Feature: - Power Dissipation (Max): 192W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	In Stock7,956
FQA10N80 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 9.8A TO-3P Manufacturer: ON Semiconductor Series: QFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.05Ohm @ 4.9A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V FET Feature: - Power Dissipation (Max): 240W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	In Stock4,824
FQA10N80C ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 10A TO-3P Manufacturer: ON Semiconductor Series: QFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V FET Feature: - Power Dissipation (Max): 240W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	In Stock8,856
FQA10N80C-F109 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 10A TO-3P Manufacturer: ON Semiconductor Series: QFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V FET Feature: - Power Dissipation (Max): 240W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	In Stock8,676

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