Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
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Transistors - FETs, MOSFETs - Arrays (3,829)
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Records 64,903

Page 1220/2164

Part Number	Description	In Stock
FQB27P06TM ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 27A D2PAK Manufacturer: ON Semiconductor Series: QFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 70mOhm @ 13.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V FET Feature: - Power Dissipation (Max): 3.75W (Ta), 120W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock32,862
FQB2N30TM ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 300V 2.1A D2PAK Manufacturer: ON Semiconductor Series: QFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.7Ohm @ 1.05A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 130pF @ 25V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 40W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock3,598
FQB2N50TM ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 2.1A D2PAK Manufacturer: ON Semiconductor Series: QFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5.3Ohm @ 1.05A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 55W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock6,642
FQB2N60TM ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 2.4A D2PAK Manufacturer: ON Semiconductor Series: QFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.7Ohm @ 1.2A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 64W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock2,700
FQB2N80TM ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 2.4A D2PAK Manufacturer: ON Semiconductor Series: QFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 6.3Ohm @ 900mA, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 85W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock7,074
FQB2N90TM ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 2.2A D2PAK Manufacturer: ON Semiconductor Series: QFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 7.2Ohm @ 1.1A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 85W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock5,040
FQB2NA90TM ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 2.8A D2PAK Manufacturer: ON Semiconductor Series: QFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5.8Ohm @ 1.4A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 107W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock7,038
FQB2P25TM ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 250V 2.3A D2PAK Manufacturer: ON Semiconductor Series: QFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4Ohm @ 1.15A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 52W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock4,050
FQB2P40TM ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 400V 2A D2PAK Manufacturer: ON Semiconductor Series: QFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 6.5Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 63W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock5,616
FQB30N06LTM ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 32A D2PAK Manufacturer: ON Semiconductor Series: QFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 25V FET Feature: - Power Dissipation (Max): 3.75W (Ta), 79W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock18,162
FQB30N06TM ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 30A D2PAK Manufacturer: ON Semiconductor Series: QFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 945pF @ 25V FET Feature: - Power Dissipation (Max): 3.75W (Ta), 79W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock7,686
FQB32N12V2TM ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 120V 32A D2PAK Manufacturer: ON Semiconductor Series: QFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 50mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1860pF @ 25V FET Feature: - Power Dissipation (Max): 3.75W (Ta), 150W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock2,232
FQB32N20CTM ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 28A D2PAK Manufacturer: ON Semiconductor Series: QFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 82mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2220pF @ 25V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 156W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock8,514
FQB33N10LTM ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 33A D2PAK Manufacturer: ON Semiconductor Series: QFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 52mOhm @ 16.5A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 25V FET Feature: - Power Dissipation (Max): 3.75W (Ta), 127W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock19,932
FQB33N10TM ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 33A D2PAK Manufacturer: ON Semiconductor Series: QFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 52mOhm @ 16.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V FET Feature: - Power Dissipation (Max): 3.75W (Ta), 127W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock7,272
FQB34N20LTM ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 31A D2PAK Manufacturer: ON Semiconductor Series: QFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 75mOhm @ 15.5A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 180W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock5,310
FQB34N20TM-AM002 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 31A D2PAK Manufacturer: ON Semiconductor Series: QFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 75mOhm @ 15.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 180W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock6,876
FQB34P10TM ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 33.5A D2PAK Manufacturer: ON Semiconductor Series: QFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 33.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 60mOhm @ 16.75A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 2910pF @ 25V FET Feature: - Power Dissipation (Max): 3.75W (Ta), 155W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock13,518
FQB34P10TM-F085 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 33.5A D2PAK Manufacturer: ON Semiconductor Series: Automotive, AEC-Q101, QFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 33.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 60mOhm @ 16.75A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 2910pF @ 25V FET Feature: - Power Dissipation (Max): 3.75W (Ta), 155W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock3,978
FQB34P10TM-F085P ON Semiconductor	Transistors - FETs, MOSFETs - Single PMOS D2PAK 100V 60 MOHM Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 33.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 60mOhm @ 16.75A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 2910pF @ 25V FET Feature: - Power Dissipation (Max): 3.75W (Ta), 155W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock8,172
FQB3N25TM ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 2.8A D2PAK Manufacturer: ON Semiconductor Series: QFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.2Ohm @ 1.4A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 45W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock2,826
FQB3N30TM ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 300V 3.2A D2PAK Manufacturer: ON Semiconductor Series: QFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.2Ohm @ 1.6A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 55W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock7,074
FQB3N40TM ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 400V 2.5A D2PAK Manufacturer: ON Semiconductor Series: QFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1.25A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 55W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock5,058
FQB3N60CTM ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 3A D2PAK Manufacturer: ON Semiconductor Series: QFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 25V FET Feature: - Power Dissipation (Max): 75W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock8,082
FQB3N80TM ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 3A D2PAK Manufacturer: ON Semiconductor Series: QFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V FET Feature: - Power Dissipation (Max): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock5,454
FQB3N90TM ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 3.6A D2PAK Manufacturer: ON Semiconductor Series: QFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.25Ohm @ 1.8A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 25V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 130W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock6,480
FQB3P20TM ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 200V 2.8A D2PAK Manufacturer: ON Semiconductor Series: QFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.4A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 52W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock7,164
FQB3P50TM ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 500V 2.7A D2PAK Manufacturer: ON Semiconductor Series: QFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.35A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 85W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock7,866
FQB44N10TM ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 43.5A D2PAK Manufacturer: ON Semiconductor Series: QFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 39mOhm @ 21.75A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V FET Feature: - Power Dissipation (Max): 3.75W (Ta), 146W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock17,700
FQB45N15V2TM ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 45A D2PAK Manufacturer: ON Semiconductor Series: QFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 40mOhm @ 22.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3030pF @ 25V FET Feature: - Power Dissipation (Max): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock5,436

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