Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Transistors - Bipolar (BJT) - Single (13,715)
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Records 64,903

Page 1254/2164

Part Number	Description	In Stock
HAT2172H-EL-E Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 30A LFPAK Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 10V FET Feature: - Power Dissipation (Max): 20W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	In Stock4,500
HAT2173H-EL-E Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 25A LFPAK Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Rds On (Max) @ Id, Vgs: 15mOhm @ 12.5A, 10V Vgs(th) (Max) @ Id: 6V @ 20mA Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 10V FET Feature: - Power Dissipation (Max): 30W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	In Stock4,068
HAT2173HWS-E Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH LFPAK-5 Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Rds On (Max) @ Id, Vgs: 15mOhm @ 12.5A, 10V Vgs(th) (Max) @ Id: 6V @ 20mA Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 10V FET Feature: - Power Dissipation (Max): 30W (Tc) Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 5-LFPAK Package / Case: SC-100, SOT-669	In Stock3,454
HAT2174H-EL-E Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 20A 5LFPAK Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Rds On (Max) @ Id, Vgs: 27mOhm @ 10A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2280pF @ 10V FET Feature: - Power Dissipation (Max): 20W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	In Stock8,442
HAT2175H-EL-E Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 15A 5LFPAK Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Rds On (Max) @ Id, Vgs: 42mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1445pF @ 10V FET Feature: - Power Dissipation (Max): 15W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	In Stock3,060
HAT2185WPWS-E Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-PAK WPAK Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 25V FET Feature: - Power Dissipation (Max): 20W (Tc) Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 8-WPAK Package / Case: 8-PowerWDFN	In Stock3,096
HAT2192WP-EL-E Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 10A WPAK Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 230mOhm @ 5A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V FET Feature: - Power Dissipation (Max): 25W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WPAK Package / Case: 8-PowerWDFN	In Stock5,760
HAT2197R-EL-E Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 16A 8SOP Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.7mOhm @ 8A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 10V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock3,330
HAT2256RWS-E Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-PAK 8SOP Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1210pF @ 10V FET Feature: - Power Dissipation (Max): 2W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock6,228
HAT2261H-EL-E Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 45A LFPAK Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.8mOhm @ 22.5A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 10V FET Feature: - Power Dissipation (Max): 25W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-LFPAK Package / Case: SC-100, SOT-669	In Stock8,838
HAT2266H-EL-E Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 30A LFPAK Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 10V FET Feature: - Power Dissipation (Max): 23W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	In Stock5,472
HAT2266HWS-E Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-PAK 8SOP Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 10V FET Feature: - Power Dissipation (Max): 23W (Tc) Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 5-LFPAK Package / Case: SC-100, SOT-669	In Stock4,212
HAT2267H-EL-E Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 25A 5LFPAK Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 16mOhm @ 12.5A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 10V FET Feature: - Power Dissipation (Max): 25W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	In Stock7,974
HAT2279H-EL-E Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 30A 5LFPAK Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3520pF @ 10V FET Feature: - Power Dissipation (Max): 25W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	In Stock2,646
HAT2279HWS-E Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-PAK 8SOP Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3520pF @ 10V FET Feature: - Power Dissipation (Max): 25W (Tc) Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 5-LFPAK Package / Case: SC-100, SOT-669	In Stock2,178
HAT2287WP-EL-E Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH WPAK Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 94mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V FET Feature: - Power Dissipation (Max): 30W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WPAK Package / Case: 8-PowerWDFN	In Stock3,562
HAT2299WP-EL-E Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH WPAK Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 110mOhm @ 7A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V FET Feature: - Power Dissipation (Max): 25W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WPAK Package / Case: 8-PowerWDFN	In Stock6,534
HCT7000M TT Electronics/Optek Technology	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 200MA SMD Manufacturer: TT Electronics/Optek Technology Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±40V Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V FET Feature: - Power Dissipation (Max): 300mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-SMD Package / Case: 3-SMD, No Lead	In Stock3,456
HCT7000MTX TT Electronics/Optek Technology	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 200MA SMD Manufacturer: TT Electronics/Optek Technology Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±40V Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V FET Feature: - Power Dissipation (Max): 300mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-SMD Package / Case: 3-SMD, No Lead	In Stock6,498
HCT7000MTXV TT Electronics/Optek Technology	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 200MA SMD Manufacturer: TT Electronics/Optek Technology Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±40V Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V FET Feature: - Power Dissipation (Max): 300mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-SMD Package / Case: 3-SMD, No Lead	In Stock4,338
HN4K03JUTE85LF Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 0.1A USV Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 2.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V FET Feature: - Power Dissipation (Max): 200mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: USV Package / Case: 5-TSSOP, SC-70-5, SOT-353	In Stock2,376
HRF3205 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 100A TO-220AB Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 8mOhm @ 59A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V FET Feature: - Power Dissipation (Max): 175W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	In Stock5,508
HRFZ44N ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 49A TO-220AB Manufacturer: ON Semiconductor Series: UltraFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 20V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V FET Feature: - Power Dissipation (Max): 120W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	In Stock4,806
HS54095TZ-E Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 0.2A TO-92 Manufacturer: Renesas Electronics America Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 16.5Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 66pF @ 25V FET Feature: - Power Dissipation (Max): 750mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 Short Body	In Stock5,580
HTNFET-D Honeywell Aerospace	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 8-DIP Manufacturer: Honeywell Aerospace Series: HTMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 400mOhm @ 100mA, 5V Vgs(th) (Max) @ Id: 2.4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 5V Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 28V FET Feature: - Power Dissipation (Max): 50W (Tj) Operating Temperature: -55°C ~ 225°C (TJ) Mounting Type: Through Hole Supplier Device Package: 8-CDIP-EP Package / Case: 8-CDIP Exposed Pad	In Stock2,988
HTNFET-DC Honeywell Aerospace	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 8-DIP Manufacturer: Honeywell Aerospace Series: HTMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 400mOhm @ 100mA, 5V Vgs(th) (Max) @ Id: 2.4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 5V Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 28V FET Feature: - Power Dissipation (Max): 50W (Tj) Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: - Package / Case: 8-CDIP Exposed Pad	In Stock4,824
HTNFET-T Honeywell Aerospace	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 4-PIN Manufacturer: Honeywell Aerospace Series: HTMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 400mOhm @ 100mA, 5V Vgs(th) (Max) @ Id: 2.4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 5V Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 28V FET Feature: - Power Dissipation (Max): 50W (Tj) Operating Temperature: -55°C ~ 225°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-Power Tab Package / Case: 4-SIP	In Stock2,214
HTNFET-TC Honeywell Aerospace	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 4-PIN Manufacturer: Honeywell Aerospace Series: HTMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 400mOhm @ 100mA, 5V Vgs(th) (Max) @ Id: 2.4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 5V Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 28V FET Feature: - Power Dissipation (Max): 50W (Tj) Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: - Package / Case: -	In Stock8,946
HUF75229P3 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V 44A TO-220AB Manufacturer: ON Semiconductor Series: UltraFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 22mOhm @ 44A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 20V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V FET Feature: - Power Dissipation (Max): 90W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	In Stock7,470
HUF75307D3 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 15A IPAK Manufacturer: ON Semiconductor Series: UltraFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 20V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V FET Feature: - Power Dissipation (Max): 45W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock5,454

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