Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

Transistors

Records 64,903
Page 1253/2164
Image
Part Number
Description
In Stock
Quantity
H5N2307LSTL-E
H5N2307LSTL-E

Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH HS SW TO-263

  • Manufacturer: Renesas Electronics America
  • Series: -
  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
In Stock7,956
H5N2522LSTL-E
H5N2522LSTL-E

Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 250V 20A LDPAK

  • Manufacturer: Renesas Electronics America
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 75W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-LDPAK
  • Package / Case: SC-83
In Stock2,934
H7N1002LS-E
H7N1002LS-E

Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V LDPAK

  • Manufacturer: Renesas Electronics America
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 10mOhm @ 37.5A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 9700pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-LDPAK
  • Package / Case: SC-83
In Stock4,302
H7N1002LSTL-E
H7N1002LSTL-E

Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V LDPAK

  • Manufacturer: Renesas Electronics America
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 10mOhm @ 37.5A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 9700pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-LDPAK
  • Package / Case: SC-83
In Stock2,754
HAF1002-90STL-E
HAF1002-90STL-E

Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 60V 15A 4LDPAK

  • Manufacturer: Renesas Electronics America
  • Series: -
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): +3V, -16V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-LDPAK
  • Package / Case: SC-83
In Stock4,194
HAT1047RWS-E
HAT1047RWS-E

Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET P-CH SOP8

  • Manufacturer: Renesas Electronics America
  • Series: -
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
In Stock7,776
HAT1069C-EL-E
HAT1069C-EL-E

Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET P-CH SMD

  • Manufacturer: Renesas Electronics America
  • Series: -
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 52mOhm @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 900mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-CMFPAK
  • Package / Case: 6-SMD, Flat Leads
In Stock7,254
HAT1072H-EL-E
HAT1072H-EL-E

Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 30V 40A LFPAK

  • Manufacturer: Renesas Electronics America
  • Series: -
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
  • Vgs (Max): +10V, -20V
  • Input Capacitance (Ciss) (Max) @ Vds: 9500pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
In Stock5,724
HAT1127HWS-E
HAT1127HWS-E

Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET P-CH SOP8

  • Manufacturer: Renesas Electronics America
  • Series: -
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
  • Vgs (Max): +10V, -20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-LFPAK
  • Package / Case: SC-100, SOT-669
In Stock3,436
HAT2033RWS-E
HAT2033RWS-E

Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH SOP8

  • Manufacturer: Renesas Electronics America
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Rds On (Max) @ Id, Vgs: 38mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
In Stock2,088
HAT2088R-EL-E
HAT2088R-EL-E

Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 200V 2A 8SOP

  • Manufacturer: Renesas Electronics America
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 440mOhm @ 1A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
In Stock5,562
HAT2096H-EL-E
HAT2096H-EL-E

Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 40A LFPAK

  • Manufacturer: Renesas Electronics America
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 20W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
In Stock6,696
HAT2099H-EL-E
HAT2099H-EL-E

Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 50A LFPAK

  • Manufacturer: Renesas Electronics America
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 3.7mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4750pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
In Stock3,508
HAT2116H-EL-E
HAT2116H-EL-E

Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 30A LFPAK

  • Manufacturer: Renesas Electronics America
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 8.2mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 15W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
In Stock6,174
HAT2131R-EL-E
HAT2131R-EL-E

Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 8SO

  • Manufacturer: Renesas Electronics America
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 350V
  • Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Rds On (Max) @ Id, Vgs: 3Ohm @ 450mA, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
In Stock3,798
HAT2140H-EL-E
HAT2140H-EL-E

Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 25A 5LFPAK

  • Manufacturer: Renesas Electronics America
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 12.5A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6500pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
In Stock6,300
HAT2141H-EL-E
HAT2141H-EL-E

Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 15A 5LFPAK

  • Manufacturer: Renesas Electronics America
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
  • Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 20W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
In Stock6,066
HAT2143H-EL-E
HAT2143H-EL-E

Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 40A 5LFPAK

  • Manufacturer: Renesas Electronics America
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 20W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
In Stock3,276
HAT2160H-EL-E
HAT2160H-EL-E

Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 60A LFPAK

  • Manufacturer: Renesas Electronics America
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 54nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 7750pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
In Stock3,618
HAT2164H-EL-E
HAT2164H-EL-E

Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 60A 5LFPAK

  • Manufacturer: Renesas Electronics America
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 3.1mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
In Stock3,132
HAT2165H-EL-E
HAT2165H-EL-E

Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 55A LFPAK

  • Manufacturer: Renesas Electronics America
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 3.3mOhm @ 27.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5180pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
In Stock7,110
HAT2165HWS-E
HAT2165HWS-E

Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH LFPAK-5

  • Manufacturer: Renesas Electronics America
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 3.3mOhm @ 27.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5180pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-LFPAK
  • Package / Case: SC-100, SOT-669
In Stock5,868
HAT2166H-EL-E
HAT2166H-EL-E

Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 45A LFPAK

  • Manufacturer: Renesas Electronics America
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 3.8mOhm @ 22.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
In Stock3,418
HAT2166HWS-E
HAT2166HWS-E

Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH LFPAK-5

  • Manufacturer: Renesas Electronics America
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 3.8mOhm @ 22.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-LFPAK
  • Package / Case: SC-100, SOT-669
In Stock8,658
HAT2168H-EL-E
HAT2168H-EL-E

Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 30A 5LFPAK

  • Manufacturer: Renesas Electronics America
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 7.9mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 15W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
In Stock363,738
HAT2168HWS-E
HAT2168HWS-E

Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH LFPAK-5

  • Manufacturer: Renesas Electronics America
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 7.9mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 15W (Tc)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-LFPAK
  • Package / Case: SC-100, SOT-669
In Stock4,446
HAT2169H-EL-E
HAT2169H-EL-E

Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 50A LFPAK

  • Manufacturer: Renesas Electronics America
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6650pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
In Stock3,870
HAT2170H-EL-E
HAT2170H-EL-E

Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 45A LFPAK

  • Manufacturer: Renesas Electronics America
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
  • Rds On (Max) @ Id, Vgs: 4.2mOhm @ 22.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4650pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
In Stock6,210
HAT2170HWS-E
HAT2170HWS-E

Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH LFPAK-5

  • Manufacturer: Renesas Electronics America
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
  • Rds On (Max) @ Id, Vgs: 4.2mOhm @ 22.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4650pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-LFPAK
  • Package / Case: SC-100, SOT-669
In Stock4,410
HAT2171H-EL-E
HAT2171H-EL-E

Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 40A 5LFPAK

  • Manufacturer: Renesas Electronics America
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
  • Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
In Stock8,442