Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
Transistors - Bipolar (BJT) - RF (1,506)
Transistors - Bipolar (BJT) - Single (13,715)
Transistors - Bipolar (BJT) - Single, Pre-Biased (3,282)
Transistors - FETs, MOSFETs - Arrays (3,829)
Transistors - FETs, MOSFETs - RF (3,043)
Transistors - FETs, MOSFETs - Single (29,970)
Transistors - IGBTs - Arrays (18)
Transistors - IGBTs - Modules (2,367)
Transistors - IGBTs - Single (3,305)
Transistors - JFETs (664)
Transistors - Programmable Unijunction (26)
Transistors - Special Purpose (162)

Records 64,903

Page 1265/2164

Part Number	Description	In Stock
IMW120R140M1HXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single COOLSIC MOSFETS 1200V Manufacturer: Infineon Technologies Series: CoolSiC™ FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1.2kV Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Rds On (Max) @ Id, Vgs: 182mOhm @ 6A, 18V Vgs(th) (Max) @ Id: 5.7V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 18V Vgs (Max): +23V, -7V Input Capacitance (Ciss) (Max) @ Vds: 454pF @ 800V FET Feature: - Power Dissipation (Max): 94W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-41 Package / Case: TO-247-3	In Stock7,452
IMW120R220M1HXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single COOLSIC MOSFETS 1200V Manufacturer: Infineon Technologies Series: CoolSiC™ FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1.2kV Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Rds On (Max) @ Id, Vgs: 286mOhm @ 4A, 18V Vgs(th) (Max) @ Id: 5.7V @ 1.6mA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 18V Vgs (Max): +23V, -7V Input Capacitance (Ciss) (Max) @ Vds: 289pF @ 800V FET Feature: - Power Dissipation (Max): 75W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-41 Package / Case: TO-247-3	In Stock3,042
IMW120R350M1HXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single COOLSIC MOSFETS 1200V Manufacturer: Infineon Technologies Series: CoolSiC™ FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1.2kV Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Rds On (Max) @ Id, Vgs: 455mOhm @ 2A, 18V Vgs(th) (Max) @ Id: 5.7V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 18V Vgs (Max): +23V, -7V Input Capacitance (Ciss) (Max) @ Vds: 182pF @ 800V FET Feature: - Power Dissipation (Max): 60W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-41 Package / Case: TO-247-3	In Stock7,776
IMZ120R030M1HXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single COOLSIC MOSFETS 1200V Manufacturer: Infineon Technologies Series: CoolSiC™ FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1.2kV Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Rds On (Max) @ Id, Vgs: 40mOhm @ 25A, 18V Vgs(th) (Max) @ Id: 5.7V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 18V Vgs (Max): +23V, -7V Input Capacitance (Ciss) (Max) @ Vds: 2.12nF @ 800V FET Feature: - Power Dissipation (Max): 227W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-4-1 Package / Case: TO-247-4	In Stock2,844
IMZ120R060M1HXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single COOLSIC MOSFETS 1200V Manufacturer: Infineon Technologies Series: CoolSiC™ FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1.2kV Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V Vgs(th) (Max) @ Id: 5.7V @ 5.6mA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 18V Vgs (Max): +23V, -7V Input Capacitance (Ciss) (Max) @ Vds: 1.06nF @ 800V FET Feature: - Power Dissipation (Max): 150W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-4-1 Package / Case: TO-247-4	In Stock5,760
IMZ120R090M1HXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single COOLSIC MOSFETS 1200V Manufacturer: Infineon Technologies Series: CoolSiC™ FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1.2kV Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Rds On (Max) @ Id, Vgs: 117mOhm @ 8.5A, 18V Vgs(th) (Max) @ Id: 5.7V @ 3.7mA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 18V Vgs (Max): +23V, -7V Input Capacitance (Ciss) (Max) @ Vds: 707pF @ 800V FET Feature: - Power Dissipation (Max): 115W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-4-1 Package / Case: TO-247-4	In Stock2,322
IMZ120R140M1HXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single COOLSIC MOSFETS 1200V Manufacturer: Infineon Technologies Series: CoolSiC™ FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1.2kV Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Rds On (Max) @ Id, Vgs: 182mOhm @ 6A, 18V Vgs(th) (Max) @ Id: 5.7V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 18V Vgs (Max): +23V, -7V Input Capacitance (Ciss) (Max) @ Vds: 454pF @ 800V FET Feature: - Power Dissipation (Max): 94W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-4-1 Package / Case: TO-247-4	In Stock8,946
IMZ120R220M1HXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single COOLSIC MOSFETS 1200V Manufacturer: Infineon Technologies Series: CoolSiC™ FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1.2kV Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Rds On (Max) @ Id, Vgs: 220mOhm @ 4A, 18V Vgs(th) (Max) @ Id: 5.7V @ 1.6mA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 18V Vgs (Max): +23V, -7V Input Capacitance (Ciss) (Max) @ Vds: 289pF @ 800V FET Feature: - Power Dissipation (Max): 75W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-4-1 Package / Case: TO-247-4	In Stock6,822
IMZ120R350M1HXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single COOLSIC MOSFETS 1200V Manufacturer: Infineon Technologies Series: CoolSiC™ FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1.2kV Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Rds On (Max) @ Id, Vgs: 350mOhm @ 2A, 18V Vgs(th) (Max) @ Id: 5.7V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 18V Vgs (Max): +23V, -7V Input Capacitance (Ciss) (Max) @ Vds: 182pF @ 800V FET Feature: - Power Dissipation (Max): 60W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-4-1 Package / Case: TO-247-4	In Stock4,986
IPA028N08N3GXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 89A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 2.8mOhm @ 89A, 10V Vgs(th) (Max) @ Id: 3.5V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 206nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 14200pF @ 40V FET Feature: - Power Dissipation (Max): 42W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	In Stock14,700
IPA029N06NXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 84A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 2.9mOhm @ 84A, 10V Vgs(th) (Max) @ Id: 3.3V @ 75µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5125pF @ 30V FET Feature: - Power Dissipation (Max): 38W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	In Stock7,884
IPA030N10N3GXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 79A TO220-FP Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 3mOhm @ 79A, 10V Vgs(th) (Max) @ Id: 3.5V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 206nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 14800pF @ 50V FET Feature: - Power Dissipation (Max): 41W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	In Stock7,470
IPA032N06N3GXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 84A TO220-3-31 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 84A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.2mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4V @ 118µA Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 30V FET Feature: - Power Dissipation (Max): 41W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-31 Full Pack Package / Case: TO-220-3 Full Pack	In Stock9,816
IPA037N08N3GXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 75A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V Vgs(th) (Max) @ Id: 3.5V @ 155µA Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 8110pF @ 40V FET Feature: - Power Dissipation (Max): 41W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	In Stock12,264
IPA040N06NXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 69A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 4mOhm @ 69A, 10V Vgs(th) (Max) @ Id: 3.3V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3375pF @ 30V FET Feature: - Power Dissipation (Max): 36W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	In Stock6,192
IPA041N04NGXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.1mOhm @ 70A, 10V Vgs(th) (Max) @ Id: 4V @ 45µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 20V FET Feature: - Power Dissipation (Max): 35W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	In Stock8,016
IPA045N10N3GXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 64A TO220-FP Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 4.5mOhm @ 64A, 10V Vgs(th) (Max) @ Id: 3.5V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 8410pF @ 50V FET Feature: - Power Dissipation (Max): 39W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	In Stock16,764
IPA057N06N3GXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 60A TO220-3-31 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5.7mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 4V @ 58µA Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 30V FET Feature: - Power Dissipation (Max): 38W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-31 Full Pack Package / Case: TO-220-3 Full Pack	In Stock9,060
IPA057N08N3GXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 60A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 5.7mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 3.5V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4750pF @ 40V FET Feature: - Power Dissipation (Max): 39W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	In Stock17,028
IPA060N06NXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 6mOhm @ 45A, 10V Vgs(th) (Max) @ Id: 3.3V @ 36µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 30V FET Feature: - Power Dissipation (Max): 33W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	In Stock6,174
IPA075N15N3GXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 43A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Rds On (Max) @ Id, Vgs: 7.5mOhm @ 43A, 10V Vgs(th) (Max) @ Id: 4V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7280pF @ 75V FET Feature: - Power Dissipation (Max): 39W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3 Full Pack	In Stock9,084
IPA083N10N5XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 45A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 8.3mOhm @ 44A, 10V Vgs(th) (Max) @ Id: 3.8V @ 49µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2730pF @ 50V FET Feature: - Power Dissipation (Max): 36W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	In Stock12,156
IPA086N10N3GXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 45A TO220-FP Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 8.6mOhm @ 45A, 10V Vgs(th) (Max) @ Id: 3.5V @ 75µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 50V FET Feature: - Power Dissipation (Max): 37.5W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	In Stock7,650
IPA093N06N3GXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 43A TO220-3-31 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 9.3mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 4V @ 34µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 30V FET Feature: - Power Dissipation (Max): 33W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-31 Full Pack Package / Case: TO-220-3 Full Pack	In Stock8,724
IPA100N08N3GXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 40A TO220-3 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 3.5V @ 46µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 40V FET Feature: - Power Dissipation (Max): 35W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	In Stock7,308
IPA105N15N3GXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 37A TO220-FP Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Rds On (Max) @ Id, Vgs: 10.5mOhm @ 37A, 10V Vgs(th) (Max) @ Id: 4V @ 160µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 75V FET Feature: - Power Dissipation (Max): 40.5W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	In Stock22,488
IPA126N10N3GXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 35A TO220-FP Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 12.6mOhm @ 35A, 10V Vgs(th) (Max) @ Id: 3.5V @ 45µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 50V FET Feature: - Power Dissipation (Max): 33W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	In Stock8,964
IPA180N10N3GXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 28A TO220-FP Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 18mOhm @ 28A, 10V Vgs(th) (Max) @ Id: 3.5V @ 35µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V FET Feature: - Power Dissipation (Max): 30W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	In Stock6,912
IPA50R140CPXKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 23A TO220-3 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 3.5V @ 930µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2540pF @ 100V FET Feature: - Power Dissipation (Max): 34W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	In Stock21,744
IPA50R190CE Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 18.5A TO220FP Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Rds On (Max) @ Id, Vgs: 190mOhm @ 6.2A, 13V Vgs(th) (Max) @ Id: 3.5V @ 510µA Gate Charge (Qg) (Max) @ Vgs: 47.2nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1137pF @ 100V FET Feature: Super Junction Power Dissipation (Max): 32W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	In Stock2,718

«
‹
1
...
1262
1263
1264
1265 (current)
1266
1267
1268
...
2164
›
»

Send Message

Certifications

Transistors

Resources

Support

Social Media

Need Help?
Send Message