Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
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Transistors - Bipolar (BJT) - Single (13,715)
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Transistors - FETs, MOSFETs - Arrays (3,829)
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Transistors - FETs, MOSFETs - Single (29,970)
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Transistors - JFETs (664)
Transistors - Programmable Unijunction (26)
Transistors - Special Purpose (162)

Records 64,903

Page 2158/2164

Part Number	Description	In Stock
U431 Vishay Siliconix	Transistors - JFETs JFET DUAL P-CH 25V TO-78 Manufacturer: Vishay Siliconix Series: - FET Type: 2 N-Channel (Dual) Voltage - Breakdown (V(BR)GSS): 25V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 24mA @ 10V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V Resistance - RDS(On): - Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	In Stock3,324
U440 Vishay Siliconix	Transistors - JFETs JFET DUAL P-CH 25V TO-71 Manufacturer: Vishay Siliconix Series: - FET Type: 2 N-Channel (Dual) Voltage - Breakdown (V(BR)GSS): 25V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 6mA @ 10V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1V @ 1nA Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V Resistance - RDS(On): - Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-71-6 Supplier Device Package: -	In Stock7,380
U440-E3 Vishay Siliconix	Transistors - JFETs JFET DUAL P-CH 25V TO-71 Manufacturer: Vishay Siliconix Series: - FET Type: 2 N-Channel (Dual) Voltage - Breakdown (V(BR)GSS): 25V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 6mA @ 10V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1V @ 1nA Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V Resistance - RDS(On): - Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-71-6 Supplier Device Package: -	In Stock6,120
U441 Vishay Siliconix	Transistors - JFETs JFET 2N-CH 25V TO-71 Manufacturer: Vishay Siliconix Series: - FET Type: 2 N-Channel (Dual) Voltage - Breakdown (V(BR)GSS): 25V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 6mA @ 10V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1V @ 1nA Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V Resistance - RDS(On): - Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-71-6 Supplier Device Package: -	In Stock3,996
U441-E3 Vishay Siliconix	Transistors - JFETs JFET 2N-CH 25V TO-71 Manufacturer: Vishay Siliconix Series: - FET Type: 2 N-Channel (Dual) Voltage - Breakdown (V(BR)GSS): 25V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 6mA @ 10V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1V @ 1nA Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V Resistance - RDS(On): - Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-71-6 Supplier Device Package: -	In Stock8,406
2N2647 Central Semiconductor Corp	Transistors - Programmable Unijunction THROUGH-HOLE UJT Manufacturer: Central Semiconductor Corp Series: - Voltage: - Power Dissipation (Max): 300mW Voltage - Output: 6V Voltage - Offset (Vt): - Current - Gate to Anode Leakage (Igao): - Current - Valley (Iv): 18mA Current - Peak: 2µA Package / Case: TO-206AA, TO-18-3 Metal Can	In Stock6,552
2N4851 Central Semiconductor Corp	Transistors - Programmable Unijunction THROUGH-HOLE UJT Manufacturer: Central Semiconductor Corp Series: - Voltage: - Power Dissipation (Max): 300mW Voltage - Output: 3V Voltage - Offset (Vt): - Current - Gate to Anode Leakage (Igao): - Current - Valley (Iv): 2mA Current - Peak: 2µA Package / Case: TO-206AA, TO-18-3 Metal Can	In Stock3,960
2N4852 Central Semiconductor Corp	Transistors - Programmable Unijunction THROUGH-HOLE UJT Manufacturer: Central Semiconductor Corp Series: - Voltage: - Power Dissipation (Max): 300mW Voltage - Output: 5V Voltage - Offset (Vt): - Current - Gate to Anode Leakage (Igao): - Current - Valley (Iv): 4mA Current - Peak: 2µA Package / Case: TO-206AA, TO-18-3 Metal Can	In Stock4,716
2N4853 Central Semiconductor Corp	Transistors - Programmable Unijunction THROUGH-HOLE UJT Manufacturer: Central Semiconductor Corp Series: - Voltage: - Power Dissipation (Max): 300mW Voltage - Output: 6V Voltage - Offset (Vt): - Current - Gate to Anode Leakage (Igao): - Current - Valley (Iv): 6mA Current - Peak: 400nA Package / Case: TO-206AA, TO-18-3 Metal Can	In Stock6,228
2N4948 Central Semiconductor Corp	Transistors - Programmable Unijunction THROUGH-HOLE UJT Manufacturer: Central Semiconductor Corp Series: - Voltage: - Power Dissipation (Max): - Voltage - Output: 6V Voltage - Offset (Vt): - Current - Gate to Anode Leakage (Igao): - Current - Valley (Iv): 2mA Current - Peak: 2µA Package / Case: TO-206AA, TO-18-3 Metal Can	In Stock6,948
2N4949 Central Semiconductor Corp	Transistors - Programmable Unijunction THROUGH-HOLE UJT Manufacturer: Central Semiconductor Corp Series: - Voltage: - Power Dissipation (Max): - Voltage - Output: 3V Voltage - Offset (Vt): - Current - Gate to Anode Leakage (Igao): - Current - Valley (Iv): 2mA Current - Peak: 1µA Package / Case: TO-206AA, TO-18-3 Metal Can	In Stock7,326
2N5431 Central Semiconductor Corp	Transistors - Programmable Unijunction THROUGH-HOLE UJT Manufacturer: Central Semiconductor Corp Series: - Voltage: - Power Dissipation (Max): - Voltage - Output: 1V Voltage - Offset (Vt): - Current - Gate to Anode Leakage (Igao): - Current - Valley (Iv): 2mA Current - Peak: 400nA Package / Case: TO-206AA, TO-18-3 Metal Can	In Stock3,562
2N6027 Central Semiconductor Corp	Transistors - Programmable Unijunction PROGRAMMABLE UJT 40V TO226-3 Manufacturer: Central Semiconductor Corp Series: - Voltage: 40V Power Dissipation (Max): 300mW Voltage - Output: 6V Voltage - Offset (Vt): 1.6V Current - Gate to Anode Leakage (Igao): 10nA Current - Valley (Iv): 50µA Current - Peak: 2µA Package / Case: TO-226-3, TO-92-3 (TO-226AA)	In Stock2,934
2N6027G ON Semiconductor	Transistors - Programmable Unijunction TRANS PROG UNIJUNCT 40V TO92 Manufacturer: ON Semiconductor Series: - Voltage: 40V Power Dissipation (Max): 300mW Voltage - Output: 11V Voltage - Offset (Vt): 1.6V Current - Gate to Anode Leakage (Igao): 10nA Current - Valley (Iv): 50µA Current - Peak: 2µA Package / Case: TO-226-3, TO-92-3 (TO-226AA)	In Stock7,236
2N6027RL1 ON Semiconductor	Transistors - Programmable Unijunction THYRISTOR PROG UNIJUNCT 40V TO92 Manufacturer: ON Semiconductor Series: - Voltage: 40V Power Dissipation (Max): 300mW Voltage - Output: 11V Voltage - Offset (Vt): 1.6V Current - Gate to Anode Leakage (Igao): 10nA Current - Valley (Iv): 50µA Current - Peak: 2µA Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	In Stock5,022
2N6027RL1G ON Semiconductor	Transistors - Programmable Unijunction THYRISTOR PROG UNIJUNCT 40V TO92 Manufacturer: ON Semiconductor Series: - Voltage: 40V Power Dissipation (Max): 300mW Voltage - Output: 11V Voltage - Offset (Vt): 1.6V Current - Gate to Anode Leakage (Igao): 10nA Current - Valley (Iv): 50µA Current - Peak: 2µA Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	In Stock6,066
2N6027RLRA ON Semiconductor	Transistors - Programmable Unijunction THYRISTOR PROG UNIJUNCT 40V TO92 Manufacturer: ON Semiconductor Series: - Voltage: 40V Power Dissipation (Max): 300mW Voltage - Output: 11V Voltage - Offset (Vt): 1.6V Current - Gate to Anode Leakage (Igao): 10nA Current - Valley (Iv): 50µA Current - Peak: 2µA Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	In Stock8,208
2N6027RLRAG ON Semiconductor	Transistors - Programmable Unijunction THYRISTOR PROG UNIJUNCT 40V TO92 Manufacturer: ON Semiconductor Series: - Voltage: 40V Power Dissipation (Max): 300mW Voltage - Output: 11V Voltage - Offset (Vt): 1.6V Current - Gate to Anode Leakage (Igao): 10nA Current - Valley (Iv): 50µA Current - Peak: 2µA Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	In Stock8,262
2N6028 Central Semiconductor Corp	Transistors - Programmable Unijunction PROGRAMMABLE UJT 40V TO226-3 Manufacturer: Central Semiconductor Corp Series: - Voltage: 40V Power Dissipation (Max): 300mW Voltage - Output: 6V Voltage - Offset (Vt): 600mV Current - Gate to Anode Leakage (Igao): 10nA Current - Valley (Iv): 25µA Current - Peak: 150nA Package / Case: TO-226-3, TO-92-3 (TO-226AA)	In Stock17,040
2N6028G ON Semiconductor	Transistors - Programmable Unijunction THYRISTOR PROG UNIJUNCT 40V TO92 Manufacturer: ON Semiconductor Series: - Voltage: 40V Power Dissipation (Max): 300mW Voltage - Output: 11V Voltage - Offset (Vt): 600mV Current - Gate to Anode Leakage (Igao): 10nA Current - Valley (Iv): 25µA Current - Peak: 150nA Package / Case: TO-226-3, TO-92-3 (TO-226AA)	In Stock4,662
2N6028RLRA ON Semiconductor	Transistors - Programmable Unijunction THYRISTOR PROG UNIJUNCT 40V TO92 Manufacturer: ON Semiconductor Series: - Voltage: 40V Power Dissipation (Max): 300mW Voltage - Output: 11V Voltage - Offset (Vt): 600mV Current - Gate to Anode Leakage (Igao): 10nA Current - Valley (Iv): 25µA Current - Peak: 150nA Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	In Stock2,952
2N6028RLRAG ON Semiconductor	Transistors - Programmable Unijunction THYRISTOR PROG UNIJUNCT 40V TO92 Manufacturer: ON Semiconductor Series: - Voltage: 40V Power Dissipation (Max): 300mW Voltage - Output: 11V Voltage - Offset (Vt): 600mV Current - Gate to Anode Leakage (Igao): 10nA Current - Valley (Iv): 25µA Current - Peak: 150nA Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	In Stock7,416
2N6028RLRMG ON Semiconductor	Transistors - Programmable Unijunction THYRISTOR PROG UNIJUNCT 40V TO92 Manufacturer: ON Semiconductor Series: - Voltage: 40V Power Dissipation (Max): 300mW Voltage - Output: 11V Voltage - Offset (Vt): 600mV Current - Gate to Anode Leakage (Igao): 10nA Current - Valley (Iv): 25µA Current - Peak: 150nA Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	In Stock3,834
2N6028RLRP ON Semiconductor	Transistors - Programmable Unijunction THYRISTOR PROG UNIJUNCT 40V TO92 Manufacturer: ON Semiconductor Series: - Voltage: 40V Power Dissipation (Max): 300mW Voltage - Output: 11V Voltage - Offset (Vt): 600mV Current - Gate to Anode Leakage (Igao): 10nA Current - Valley (Iv): 25µA Current - Peak: 150nA Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	In Stock6,228
2N6028RLRPG ON Semiconductor	Transistors - Programmable Unijunction THYRISTOR PROG UNIJUNCT 40V TO92 Manufacturer: ON Semiconductor Series: - Voltage: 40V Power Dissipation (Max): 300mW Voltage - Output: 11V Voltage - Offset (Vt): 600mV Current - Gate to Anode Leakage (Igao): 10nA Current - Valley (Iv): 25µA Current - Peak: 150nA Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	In Stock3,060
CMPP6027R BK Central Semiconductor Corp	Transistors - Programmable Unijunction PROGRAMMABLE UJT SOT-23 Manufacturer: Central Semiconductor Corp Series: - Voltage: 40V Power Dissipation (Max): 167mW Voltage - Output: 6V Voltage - Offset (Vt): 1.6V Current - Gate to Anode Leakage (Igao): 10nA Current - Valley (Iv): 50µA Current - Peak: 2µA Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock6,732
CMPP6027R TR Central Semiconductor Corp	Transistors - Programmable Unijunction PROGRAMMABLE UJT SOT-23 Manufacturer: Central Semiconductor Corp Series: - Voltage: 40V Power Dissipation (Max): 167mW Voltage - Output: 6V Voltage - Offset (Vt): 1.6V Current - Gate to Anode Leakage (Igao): 10nA Current - Valley (Iv): 50µA Current - Peak: 2µA Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock6,948
CMPP6027 TR Central Semiconductor Corp	Transistors - Programmable Unijunction PROGRAMMABLE UJT SOT-23 Manufacturer: Central Semiconductor Corp Series: * Voltage: - Power Dissipation (Max): - Voltage - Output: - Voltage - Offset (Vt): - Current - Gate to Anode Leakage (Igao): - Current - Valley (Iv): - Current - Peak: - Package / Case: -	In Stock3,294
CMPP6028R BK Central Semiconductor Corp	Transistors - Programmable Unijunction PROGRAMMABLE UJT SOT-23 Manufacturer: Central Semiconductor Corp Series: - Voltage: 40V Power Dissipation (Max): 167mW Voltage - Output: 6V Voltage - Offset (Vt): 600mV Current - Gate to Anode Leakage (Igao): 10nA Current - Valley (Iv): 25µA Current - Peak: 150nA Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock5,724
CMPP6028R TR Central Semiconductor Corp	Transistors - Programmable Unijunction PROGRAMMABLE UJT SOT-23 Manufacturer: Central Semiconductor Corp Series: - Voltage: 40V Power Dissipation (Max): 167mW Voltage - Output: 6V Voltage - Offset (Vt): 600mV Current - Gate to Anode Leakage (Igao): 10nA Current - Valley (Iv): 25µA Current - Peak: 150nA Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock4,536

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