Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Records 64,903

Page 958/2164

Part Number	Description	In Stock
2SK3046 Panasonic Electronic Components	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 7A TO-220D Manufacturer: Panasonic Electronic Components Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1Ohm @ 4A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 20V FET Feature: - Power Dissipation (Max): 2W (Ta), 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220D-A1 Package / Case: TO-220-3 Full Pack	In Stock6,264
2SK3047 Panasonic Electronic Components	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 2A TO-220D Manufacturer: Panasonic Electronic Components Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 20V FET Feature: - Power Dissipation (Max): 2W (Ta), 30W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220D-A1 Package / Case: TO-220-3 Full Pack	In Stock7,380
2SK3048 Panasonic Electronic Components	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 3A TO-220D Manufacturer: Panasonic Electronic Components Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V FET Feature: - Power Dissipation (Max): 2W (Ta), 35W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220D-A1 Package / Case: TO-220-3 Full Pack	In Stock8,280
2SK3050TL Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 2A DPAK Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5.5Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25.6nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V FET Feature: - Power Dissipation (Max): 20W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: CPT3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock2,790
2SK306400L Panasonic Electronic Components	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V .1A S-MINI-3P Manufacturer: Panasonic Electronic Components Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 50Ohm @ 10mA, 5V Vgs(th) (Max) @ Id: 2V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 150mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SMini3-G1 Package / Case: SC-70, SOT-323	In Stock3,312
2SK3064G0L Panasonic Electronic Components	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V .1A S-MINI-3P Manufacturer: Panasonic Electronic Components Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 50Ohm @ 10mA, 5V Vgs(th) (Max) @ Id: 2V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 150mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SMini3-F2 Package / Case: SC-85	In Stock5,004
2SK3065T100 Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 2A SOT-89 Manufacturer: Rohm Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Rds On (Max) @ Id, Vgs: 320mOhm @ 1A, 4V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MPT3 Package / Case: TO-243AA	In Stock160,428
2SK3068(TE24L,Q) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 12A TO220SM Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 10V FET Feature: - Power Dissipation (Max): 100W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-220SM Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock6,570
2SK3127(TE24L,Q) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 45A TO220SM Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 10V FET Feature: - Power Dissipation (Max): 65W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-220SM Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock6,462
2SK3128(Q) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 60A TO-3PN Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 10V FET Feature: - Power Dissipation (Max): 150W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P(N) Package / Case: TO-3P-3, SC-65-3	In Stock8,532
2SK3132(Q) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 50A TO-3P(L) Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 50A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 95mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 3.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 10V FET Feature: - Power Dissipation (Max): 250W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P(L) Package / Case: TO-3PL	In Stock6,174
2SK3199 Sanken	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V TO-220F Manufacturer: Sanken Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 10V FET Feature: - Power Dissipation (Max): 30W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	In Stock5,832
2SK326800L Panasonic Electronic Components	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 15A UG-2 Manufacturer: Panasonic Electronic Components Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 100mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V FET Feature: - Power Dissipation (Max): 1W (Ta), 20W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DL Package / Case: TO-252-4, DPak (3 Leads + Tab)	In Stock4,194
2SK327700L Panasonic Electronic Components	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 2.5A UG-1 Manufacturer: Panasonic Electronic Components Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.7Ohm @ 1.25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 20V FET Feature: - Power Dissipation (Max): 1W (Ta), 10W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-G1 Package / Case: U-G1	In Stock24,498
2SK3309(Q) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 450V 10A TO220FL Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 650mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 10V FET Feature: - Power Dissipation (Max): 65W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FL Package / Case: TO-220-3, Short Tab	In Stock8,820
2SK3309(TE24L,Q) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 450V 10A TO220SM Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 650mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 10V FET Feature: - Power Dissipation (Max): 65W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-220SM Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock4,806
2SK3313(Q) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 12A TO220NIS Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 620mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 10V FET Feature: - Power Dissipation (Max): 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220NIS Package / Case: TO-220-3 Full Pack	In Stock6,984
2SK3318 Panasonic Electronic Components	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 15A TOP-3F Manufacturer: Panasonic Electronic Components Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 460mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 20V FET Feature: - Power Dissipation (Max): 3W (Ta), 100W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TOP-3F-A1 Package / Case: TOP-3F	In Stock5,436
2SK3342(TE16L1,NQ) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 4.5A PW-MOLD Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 10V FET Feature: - Power Dissipation (Max): 20W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PW-MOLD Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock3,400
2SK3353(0)-Z-E1-AZ Renesas Electronics America	Transistors - FETs, MOSFETs - Single TRANSISTOR Manufacturer: Renesas Electronics America Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock3,240
2SK3353-AZ Renesas Electronics America	Transistors - FETs, MOSFETs - Single TRANSISTOR Manufacturer: Renesas Electronics America Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock4,878
2SK3353-Z-E1-AZ Renesas Electronics America	Transistors - FETs, MOSFETs - Single TRANSISTOR Manufacturer: Renesas Electronics America Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock5,094
2SK3367(01)-Z-E1-AZ Renesas Electronics America	Transistors - FETs, MOSFETs - Single TRANSISTOR Manufacturer: Renesas Electronics America Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock6,660
2SK3377(0)-Z-E1-AZ Renesas Electronics America	Transistors - FETs, MOSFETs - Single TRANSISTOR Manufacturer: Renesas Electronics America Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock7,256
2SK3377(0)-Z-E2-AZ Renesas Electronics America	Transistors - FETs, MOSFETs - Single TRANSISTOR Manufacturer: Renesas Electronics America Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock7,578
2SK3377-Z-E1-AZ Renesas Electronics America	Transistors - FETs, MOSFETs - Single TRANSISTOR Manufacturer: Renesas Electronics America Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock22,427
2SK3377-Z-E2-AZ Renesas Electronics America	Transistors - FETs, MOSFETs - Single TRANSISTOR Manufacturer: Renesas Electronics America Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock6,876
2SK3385(0)-Z-E1-AZ Renesas Electronics America	Transistors - FETs, MOSFETs - Single TRANSISTOR Manufacturer: Renesas Electronics America Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock5,652
2SK3386(0)-Z-E1-AZ Renesas Electronics America	Transistors - FETs, MOSFETs - Single TRANSISTOR Manufacturer: Renesas Electronics America Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock3,456
2SK3388(TE24L,Q) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 20A SC-97 Manufacturer: Toshiba Semiconductor and Storage Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 10V FET Feature: - Power Dissipation (Max): 125W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-TFP (9.2x9.2) Package / Case: SC-97	In Stock2,466

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