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Renesas introduces a family of SiC power devices that integrate power conversion circuits in a single package

Feb 19 2012 2012-02 Connectors Renesas Electronics America
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Renesas Electronics announced the launch of three silicon carbide (SiC) composite power devices: RJQ6020DPM, RJQ6021DPM and RJQ6022DPM. The three products combine multiple silicon carbide diodes and multiple power transistors in a single package to form power conversion circuits.

     Renesas Electronics announced the launch of three silicon carbide (SiC) composite power devices: RJQ6020DPM, RJQ6021DPM and RJQ6022DPM. The three products combine multiple silicon carbide diodes and multiple power transistors in a single package to form power conversion circuits. These power devices are Renesas Electronics' second family of power semiconductors using silicon carbide. Silicon carbide is a new material which can effectively reduce the loss. The new power devices are designed for use in power electronics such as home appliances (such as air conditioners), PC servers and solar power generation systems.

     Recently, in order to deal with environmental issues, the demand for reducing the power consumption of electrical equipment and improving the efficiency of electrical products has been increasing. In particular, there is a growing trend to improve power conversion efficiency to reduce the power consumption of power conversion circuits for products such as air conditioners, communication base stations, PC servers and solar power generation systems, as well as inverter circuits for applications such as motors and industrial equipment.

     This has spurred a huge demand for power devices with higher efficiency and lower loss characteristics. To this end, Renesas Electronics introduced low-loss silicon carbide Schottky Barrier Diode (SiC-SBD) products. This is followed by a new family of silicon carbide composite power devices, which enable circuit (switching, power conversion, etc.) design in a single package by combining SiC-SBD and high-power MOSFETs or IGBTs.

     These new products have a peak voltage rating of 600 V and use silicon carbide diodes based on low-leakage current SiC-SBD technology developed jointly by Hitachi and Renesas Electronics. They combine low loss with a compact design and feature a 5-pin TO-3P package, while pin allocation is optimized for specific applications, making it easy TO use these devices when configuring circuit units.

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