The N-channel power MOSFET lineup reduces the power consumption of the power supply

     Toshiba Electronics Europe GmbH has added two new 150V N-channel power MOSFETs based on its latest generation U-MOS X-H Trench process. The TPH1100CQ5 and TPH1400CQ5 devices are designed for high-performance switching power supplies, such as those used in data centers, communications base stations, and other industrial applications.

     The new device has a maximum drain-source voltage (VDSS) rating of 150V and drain current (ID) handling 49A (TPH1100CQ5) and 32A (TPH1400CQ5). They also have a maximum drain-source on-resistance (RDS) of 11mOhm and 14mOhm, respectively.

     The new product offers improved reverse recovery features that are critical in synchronous rectification applications. In the case of the TPH1400CQ5, the reverse recovery charge (Qrr) is reduced by approximately 73% to 27nC(type) and the reverse recovery time (trr) is 36ns(type), which is approximately 45% faster than the company's existing TPH1400CQH, which provides the same voltage and RDS(ON).

     The TPH1400CQ5 is used in synchronous rectification applications to reduce power losses in switching power supplies and help improve efficiency. If the device is used in a circuit in non-reverse recovery mode, the power consumption is equivalent to the power consumption of TPH1400CQH.

     To support designers, the company has developed a G0 SPICE model for quickly verifying circuit functionality and a high-precision G2 SPICE model for accurately reproducing transient characteristics. When used in circuits operating in reverse recovery mode, the new product reduces the spike voltage generated during the switching process, helping to improve the EMI characteristics of the design and reducing the need for external filtering. These devices are installed in a common surface mount SOP Advance(N) package that measures only 4.9mm x 6.1mm x 1mm.