Toshiba Semiconductor and Storage Transistors - FETs, MOSFETs - Single
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Show Filters
Reset Filters
Apply Filters
CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
ManufacturerToshiba Semiconductor and Storage
Records 786
Page 25/27
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 10A 8SOP |
7,596 |
|
U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4.5V, 10V | 13mOhm @ 5A, 10V | 2V @ 500µA | 64nC @ 10V | +20V, -25V | 2580pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 11A 8SOP |
5,310 |
|
U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 10mOhm @ 5.5A, 10V | 2V @ 500µA | 56nC @ 10V | +20V, -25V | 2400pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 10A 8SOP |
4,122 |
|
U-MOSV-H | N-Channel | MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4.5V, 10V | 13.3mOhm @ 5A, 10V | 2.3V @ 1mA | 15nC @ 10V | ±20V | 1700pF @ 10V | Schottky Diode (Body) | 1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 12A 8SOP |
2,448 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta) | 4.5V, 10V | 10.1mOhm @ 6A, 10V | 2.3V @ 1mA | 19nC @ 10V | ±20V | 1800pF @ 10V | Schottky Diode (Body) | - | - | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 24A 8TSON-ADV |
5,760 |
|
U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 30V | 24A (Ta) | - | 7mOhm @ 12A, 10V | 3V @ 200µA | 26nC @ 10V | - | 1270pF @ 10V | - | - | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 13A 8TSON-ADV |
3,490 |
|
U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 11.4mOhm @ 6.5A, 10V | 2.3V @ 200µA | 20nC @ 10V | ±20V | 1350pF @ 10V | - | 700mW (Ta), 18W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 11A 8TSON-ADV |
4,698 |
|
U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 15mOhm @ 5.5A, 10V | 2.3V @ 100µA | 15nC @ 10V | ±20V | 1100pF @ 10V | - | 700mW (Ta), 17W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 9A 8TSON-ADV |
7,398 |
|
U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta) | 4.5V, 10V | 25mOhm @ 4.5A, 10V | 2.3V @ 100µA | 9.5nC @ 10V | ±20V | 690pF @ 10V | - | 700mW (Ta), 15W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 50V 100MA USM |
4,392 |
|
- | N-Channel | MOSFET (Metal Oxide) | 50V | 100mA (Ta) | - | 20Ohm @ 10mA, 4V | 1.5V @ 1µA | - | - | 7pF @ 3V | - | 150mW (Ta) | - | Surface Mount | USM | SC-70, SOT-323 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 200MA SMD |
5,940 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 200mA (Ta) | 4.5V, 10V | 2.1Ohm @ 500mA, 10V | 2.5V @ 250µA | - | ±20V | 17pF @ 25V | - | 200mW (Ta) | 150°C (TJ) | Surface Mount | S-Mini | TO-236-3, SC-59, SOT-23-3 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 80V 80A TO-220 |
6,444 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 80V | 80A (Tc) | 10V | 8.4mOhm @ 23A, 10V | 4V @ 500µA | 37nC @ 10V | ±20V | 2500pF @ 40V | - | 103W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N CH 600V 15.8A TO-220SIS |
4,662 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 15.8A (Ta) | 10V | 190mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38nC @ 10V | ±30V | 1350pF @ 300V | Super Junction | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N CH 120V 88A TO-220 |
6,624 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 120V | 88A (Tc) | 10V | 9.4mOhm @ 21A, 10V | 4V @ 1mA | 52nC @ 10V | ±20V | 3100pF @ 60V | - | 140W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N CH 600V 15.8A TO-220SIS |
5,994 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 15.8A (Ta) | 10V | 190mOhm @ 7.9A, 10V | 3.7V @ 1.5mA | 43nC @ 10V | ±30V | 1350pF @ 300V | Super Junction | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N CH 600V 15.8A TO-3P(N) |
2,214 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 15.8A (Ta) | 10V | 190mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38nC @ 10V | ±30V | 1350pF @ 300V | Super Junction | 130W (Tc) | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N CH 600V 11.5A DPAK |
5,436 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 11.5A (Ta) | 10V | 340mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25nC @ 10V | ±30V | 890pF @ 300V | Super Junction | 100W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N CH 600V 11.5A IPAK |
3,490 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 11.5A (Ta) | 10V | 340mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25nC @ 10V | ±30V | 890pF @ 300V | Super Junction | 100W (Tc) | 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Stub Leads, IPak |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 0.05A USM |
5,292 |
|
- | N-Channel | MOSFET (Metal Oxide) | 20V | 50mA (Ta) | 2.5V | 40Ohm @ 10mA, 2.5V | - | - | 10V | 5.5pF @ 3V | - | 100mW (Ta) | 150°C (TJ) | Surface Mount | SC-70 | SC-70, SOT-323 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 0.1A USV |
2,376 |
|
- | N-Channel | MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 2.5V | 12Ohm @ 10mA, 2.5V | - | - | 10V | 8.5pF @ 3V | - | 200mW (Ta) | 150°C (TJ) | Surface Mount | USV | 5-TSSOP, SC-70-5, SOT-353 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 2.7A TSM |
6,192 |
|
U-MOSII | P-Channel | MOSFET (Metal Oxide) | 30V | 2.7A (Ta) | 4V, 10V | 85mOhm @ 1.35A, 10V | - | - | ±20V | 413pF @ 15V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | TSM | TO-236-3, SC-59, SOT-23-3 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 0.1A USV |
5,814 |
|
π-MOSVI | N-Channel | MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 1.5V, 4V | 3Ohm @ 10mA, 4V | - | - | ±10V | 9.3pF @ 3V | - | 200mW (Ta) | 150°C (TJ) | Surface Mount | USV | 5-TSSOP, SC-70-5, SOT-353 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 0.1A SSM |
2,502 |
|
- | N-Channel | MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 2.5V | 12Ohm @ 10mA, 2.5V | - | - | 10V | 8.5pF @ 3V | - | 100mW (Ta) | 150°C (TJ) | Surface Mount | SSM | SC-75, SOT-416 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 0.1A CST3 |
5,130 |
|
π-MOSVI | P-Channel | MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 1.5V, 4V | 8Ohm @ 10mA, 4V | 1.1V @ 100µA | - | ±10V | 11pF @ 3V | - | 100mW (Ta) | 150°C (TJ) | Surface Mount | CST3 | SC-101, SOT-883 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 0.33A VESM |
7,164 |
|
U-MOSIII | P-Channel | MOSFET (Metal Oxide) | 20V | 330mA (Ta) | 1.5V, 4.5V | 1.31Ohm @ 100mA, 4.5V | - | 1.2nC @ 4V | ±8V | 43pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | VESM | SOT-723 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 3.2A TSM |
8,766 |
|
π-MOSVI | N-Channel | MOSFET (Metal Oxide) | 30V | 3.2A (Ta) | 2.5V, 4V | 120mOhm @ 1.6A, 4V | - | - | ±10V | 152pF @ 10V | - | 1.25W (Ta) | 150°C (TJ) | Surface Mount | TSM | TO-236-3, SC-59, SOT-23-3 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 3.5A TSM |
4,140 |
|
- | N-Channel | MOSFET (Metal Oxide) | 20V | 3.5A (Ta) | 1.8V, 4V | 56mOhm @ 2A, 4V | - | 4.8nC @ 4V | ±12V | 320pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | TSM | TO-236-3, SC-59, SOT-23-3 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 3A TSM |
3,400 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 3A (Ta) | 1.8V, 4V | 71mOhm @ 2A, 4V | - | 4.3nC @ 4V | ±12V | 270pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | TSM | TO-236-3, SC-59, SOT-23-3 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 4.7A TSM |
2,412 |
|
- | N-Channel | MOSFET (Metal Oxide) | 20V | 4.7A (Ta) | 1.8V, 4V | 31mOhm @ 4A, 4V | - | - | ±12V | 1020pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | TSM | TO-236-3, SC-59, SOT-23-3 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 5A S-MOS |
6,030 |
|
- | N-Channel | MOSFET (Metal Oxide) | 20V | 5A (Ta) | 1.5V, 4V | 28mOhm @ 4A, 4V | - | 14.8nC @ 4V | ±10V | 1120pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | TSM | TO-236-3, SC-59, SOT-23-3 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 2.5A TSM |
3,960 |
|
U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 60V | 2.5A (Ta) | 4.5V, 10V | 107mOhm @ 2A, 10V | - | 7nC @ 10V | ±20V | 235pF @ 30V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | TSM | TO-236-3, SC-59, SOT-23-3 |