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APT50GS60BRDQ2G

APT50GS60BRDQ2G

For Reference Only

Part Number APT50GS60BRDQ2G
PNEDA Part # APT50GS60BRDQ2G
Description IGBT 600V 93A 415W TO247
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 22,464
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

APT50GS60BRDQ2G Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberAPT50GS60BRDQ2G
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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APT50GS60BRDQ2G Specifications

ManufacturerMicrosemi Corporation
SeriesThunderbolt IGBT®
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)93A
Current - Collector Pulsed (Icm)195A
Vce(on) (Max) @ Vge, Ic3.15V @ 15V, 50A
Power - Max415W
Switching Energy755µJ (off)
Input TypeStandard
Gate Charge235nC
Td (on/off) @ 25°C16ns/225ns
Test Condition400V, 40A, 4.7Ohm, 15V
Reverse Recovery Time (trr)25ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247 [B]

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Input Type

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Test Condition

400V, 18A, 22Ohm, 15V

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Operating Temperature

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Mounting Type

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Package / Case

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Td (on/off) @ 25°C

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Test Condition

600V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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