Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

BSC016N04LSGATMA1

BSC016N04LSGATMA1

For Reference Only

Part Number BSC016N04LSGATMA1
PNEDA Part # BSC016N04LSGATMA1
Description MOSFET N-CH 40V 100A TDSON-8
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,290
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 22 - Jun 27 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSC016N04LSGATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSC016N04LSGATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • BSC016N04LSGATMA1 Datasheet
  • where to find BSC016N04LSGATMA1
  • Infineon Technologies

  • Infineon Technologies BSC016N04LSGATMA1
  • BSC016N04LSGATMA1 PDF Datasheet
  • BSC016N04LSGATMA1 Stock

  • BSC016N04LSGATMA1 Pinout
  • Datasheet BSC016N04LSGATMA1
  • BSC016N04LSGATMA1 Supplier

  • Infineon Technologies Distributor
  • BSC016N04LSGATMA1 Price
  • BSC016N04LSGATMA1 Distributor

BSC016N04LSGATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C31A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2V @ 85µA
Gate Charge (Qg) (Max) @ Vgs150nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds12000pF @ 20V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 139W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-1
Package / Case8-PowerTDFN

The Products You May Be Interested In

TK14A65W,S5X

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

DTMOSIV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

13.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

250mOhm @ 6.9A, 10V

Vgs(th) (Max) @ Id

3.5V @ 690µA

Gate Charge (Qg) (Max) @ Vgs

35nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1300pF @ 300V

FET Feature

-

Power Dissipation (Max)

40W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220SIS

Package / Case

TO-220-3 Full Pack

IPP12CNE8N G

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

85V

Current - Continuous Drain (Id) @ 25°C

67A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

12.9mOhm @ 67A, 10V

Vgs(th) (Max) @ Id

4V @ 83µA

Gate Charge (Qg) (Max) @ Vgs

64nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4340pF @ 40V

FET Feature

-

Power Dissipation (Max)

125W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3

Package / Case

TO-220-3

FCP11N60N-F102

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

10.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

299mOhm @ 5.4A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

35.6nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1505pF @ 100V

FET Feature

-

Power Dissipation (Max)

94W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack

MMFT5P03HDT1

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

3.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

100mOhm @ 5.2A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

24nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

950pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.56W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-223

Package / Case

TO-261-4, TO-261AA

IRFC4768ED

Infineon Technologies

Manufacturer

Infineon Technologies

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

Recently Sold

EEE-FK1V100R

EEE-FK1V100R

Panasonic Electronic Components

CAP ALUM 10UF 20% 35V SMD

L7980TR

L7980TR

STMicroelectronics

IC REG BUCK ADJ 2A 8VFQFPN

VRF150MP

VRF150MP

Microsemi

RF MOSFET N-CHANNEL 50V M174

SUD40N08-16-E3

SUD40N08-16-E3

Vishay Siliconix

MOSFET N-CH 80V 40A TO252

TEPT4400

TEPT4400

Vishay Semiconductor Opto Division

SENSOR PHOTO 570NM TOP VIEW RAD

SP0503BAHT

SP0503BAHT

Littelfuse

TVS DIODE 5.5V 8.5V SOT143-4

TS27L2CDT

TS27L2CDT

STMicroelectronics

IC OPAMP GP 2 CIRCUIT 8SO

IR2151

IR2151

Infineon Technologies

IC DRVR HALF BRDG SELF-OSC 8-DIP

S25FL256SAGBHIA00

S25FL256SAGBHIA00

Cypress Semiconductor

IC FLASH 256M SPI 133MHZ 24BGA

MC68HC711E9CFN2

MC68HC711E9CFN2

NXP

IC MCU 8BIT 12KB OTP 52PLCC

0ZCJ0025AF2E

0ZCJ0025AF2E

Bel Fuse

PTC RESET FUSE 24V 250MA 1206

NTJD4001NT1G

NTJD4001NT1G

ON Semiconductor

MOSFET 2N-CH 30V 0.25A SOT-363