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BSO211PNTMA1

BSO211PNTMA1

For Reference Only

Part Number BSO211PNTMA1
PNEDA Part # BSO211PNTMA1
Description MOSFET 2P-CH 20V 4.7A 8SOIC
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,610
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 9 - May 14 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSO211PNTMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSO211PNTMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
BSO211PNTMA1, BSO211PNTMA1 Datasheet (Total Pages: 8, Size: 81.22 KB)
PDFBSO211PNTMA1 Datasheet Cover
BSO211PNTMA1 Datasheet Page 2 BSO211PNTMA1 Datasheet Page 3 BSO211PNTMA1 Datasheet Page 4 BSO211PNTMA1 Datasheet Page 5 BSO211PNTMA1 Datasheet Page 6 BSO211PNTMA1 Datasheet Page 7 BSO211PNTMA1 Datasheet Page 8

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BSO211PNTMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET Type2 P-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C4.7A
Rds On (Max) @ Id, Vgs67mOhm @ 4.7A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 25µA
Gate Charge (Qg) (Max) @ Vgs23.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds920pF @ 15V
Power - Max2W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device PackageP-DSO-8

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