Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

BSS84P E6433

BSS84P E6433

For Reference Only

Part Number BSS84P E6433
PNEDA Part # BSS84P-E6433
Description MOSFET P-CH 60V 170MA SOT-23
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,598
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSS84P E6433 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSS84P E6433
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BSS84P E6433, BSS84P E6433 Datasheet (Total Pages: 8, Size: 145.67 KB)
PDFBSS84PL6433HTMA1 Datasheet Cover
BSS84PL6433HTMA1 Datasheet Page 2 BSS84PL6433HTMA1 Datasheet Page 3 BSS84PL6433HTMA1 Datasheet Page 4 BSS84PL6433HTMA1 Datasheet Page 5 BSS84PL6433HTMA1 Datasheet Page 6 BSS84PL6433HTMA1 Datasheet Page 7 BSS84PL6433HTMA1 Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • BSS84P E6433 Datasheet
  • where to find BSS84P E6433
  • Infineon Technologies

  • Infineon Technologies BSS84P E6433
  • BSS84P E6433 PDF Datasheet
  • BSS84P E6433 Stock

  • BSS84P E6433 Pinout
  • Datasheet BSS84P E6433
  • BSS84P E6433 Supplier

  • Infineon Technologies Distributor
  • BSS84P E6433 Price
  • BSS84P E6433 Distributor

BSS84P E6433 Specifications

ManufacturerInfineon Technologies
SeriesSIPMOS®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs8Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs1.5nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds19pF @ 25V
FET Feature-
Power Dissipation (Max)360mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3
Package / CaseTO-236-3, SC-59, SOT-23-3

The Products You May Be Interested In

STH250N55F3-6

STMicroelectronics

Manufacturer

STMicroelectronics

Series

STripFET™ III

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

180A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.6mOhm @ 60A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

100nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6800pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

H²PAK

Package / Case

TO-263-7, D²Pak (6 Leads + Tab)

TSM130NB06CR RLG

Taiwan Semiconductor Corporation

Manufacturer

Taiwan Semiconductor Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

10A (Ta), 51A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

13mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

36nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2380pF @ 30V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta), 83W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-PDFN (5x6)

Package / Case

8-PowerTDFN

EPC2034

EPC

Manufacturer

EPC

Series

eGaN®

FET Type

N-Channel

Technology

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

48A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V

Rds On (Max) @ Id, Vgs

10mOhm @ 20A, 5V

Vgs(th) (Max) @ Id

2.5V @ 7mA

Gate Charge (Qg) (Max) @ Vgs

8.8nC @ 5V

Vgs (Max)

+6V, -4V

Input Capacitance (Ciss) (Max) @ Vds

950pF @ 100V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-40°C ~ 140°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Die

Package / Case

Die

APT56M60B2

Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS 8™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

130mOhm @ 28A, 10V

Vgs(th) (Max) @ Id

5V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs

280nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

11300pF @ 25V

FET Feature

-

Power Dissipation (Max)

1040W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247 [B]

Package / Case

TO-247-3 Variant

IRFR3412PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

48A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

25mOhm @ 29A, 10V

Vgs(th) (Max) @ Id

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

89nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3430pF @ 25V

FET Feature

-

Power Dissipation (Max)

140W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Recently Sold

PVG612ASPBF

PVG612ASPBF

Infineon Technologies

SSR RELAY SPST-NO 2A 0-60V

EMZA250ADA101MF80G

EMZA250ADA101MF80G

United Chemi-Con

CAP ALUM 100UF 20% 25V SMD

MAX3208EAUB+T

MAX3208EAUB+T

Maxim Integrated

TVS DIODE 10UMAX

TLP116A(TPL,E

TLP116A(TPL,E

Toshiba Semiconductor and Storage

OPTOISO 3.75KV PUSH PULL SO6-5

VLS252012HBX-2R2M-1

VLS252012HBX-2R2M-1

TDK

FIXED IND 2.2UH 2.3A 102 MOHM

RB521S-30TE61

RB521S-30TE61

Rohm Semiconductor

DIODE SCHOTTKY 30V 200MA EMD2

1SMB28AT3G

1SMB28AT3G

Littelfuse

TVS DIODE 28V 45.4V SMB

BLM41PG102SN1L

BLM41PG102SN1L

Murata

FERRITE BEAD 1 KOHM 1806 1LN

7447709680

7447709680

Wurth Electronics

FIXED IND 68UH 3.2A 89 MOHM SMD

FMMT625TA

FMMT625TA

Diodes Incorporated

TRANS NPN 150V 1A SOT23-3

BYG10D-E3/TR

BYG10D-E3/TR

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 1.5A

S29AL016J70TFI020

S29AL016J70TFI020

Cypress Semiconductor

IC FLASH 16M PARALLEL 48TSOP