BSZ086P03NS3EGATMA1
For Reference Only
| Part Number | BSZ086P03NS3EGATMA1 |
| PNEDA Part # | BSZ086P03NS3EGATMA1 |
| Description | MOSFET P-CH 30V 40A TSDSON-8 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 82,158 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 19 - Jun 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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BSZ086P03NS3EGATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | BSZ086P03NS3EGATMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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BSZ086P03NS3EGATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 13.5A (Ta), 40A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 8.6mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 3.1V @ 105µA |
| Gate Charge (Qg) (Max) @ Vgs | 57.5nC @ 10V |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 4785pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 69W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TSDSON-8 |
| Package / Case | 8-PowerTDFN |
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