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BUZ31L H

BUZ31L H

For Reference Only

Part Number BUZ31L H
PNEDA Part # BUZ31L-H
Description MOSFET N-CH 200V 13.5A TO220-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,272
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BUZ31L H Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBUZ31L H
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BUZ31L H, BUZ31L H Datasheet (Total Pages: 10, Size: 420.59 KB)
PDFBUZ31L H Datasheet Cover
BUZ31L H Datasheet Page 2 BUZ31L H Datasheet Page 3 BUZ31L H Datasheet Page 4 BUZ31L H Datasheet Page 5 BUZ31L H Datasheet Page 6 BUZ31L H Datasheet Page 7 BUZ31L H Datasheet Page 8 BUZ31L H Datasheet Page 9 BUZ31L H Datasheet Page 10

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BUZ31L H Specifications

ManufacturerInfineon Technologies
SeriesSIPMOS®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C13.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs200mOhm @ 7A, 5V
Vgs(th) (Max) @ Id2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1600pF @ 25V
FET Feature-
Power Dissipation (Max)95W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3
Package / CaseTO-220-3

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