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DMN2300UFB4-7B

DMN2300UFB4-7B DMN2300UFB4-7B

For Reference Only

Part Number DMN2300UFB4-7B
PNEDA Part # DMN2300UFB4-7B
Manufacturer Diodes Incorporated
Description MOSFET N-CH 20V 1.3A 3DFN
Unit Price
  • 1$ 0.0000
  • 100$ 0.0000
  • 500$ 0.0000
  • 1000$ 0.0000
  • 2500$ 0.0000
In Stock 1,272,342
Warehouses USA, Europe, China, Hong Kong SAR
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery
Estimated Delivery Dec 6 - Dec 11 (Choose Expedited Shipping)
Warranty Up to 1 year [PNEDA-Warranty]*

DMN2300UFB4-7B Resources

Brand Diodes Incorporated
Mfr. Part NumberDMN2300UFB4-7B
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
DMN2300UFB4-7B, DMN2300UFB4-7B Datasheet (Total Pages: 7, Size: 165.12 KB)
PDFDMN2300UFB4-7B Datasheet Cover
DMN2300UFB4-7B Datasheet Page 2 DMN2300UFB4-7B Datasheet Page 3 DMN2300UFB4-7B Datasheet Page 4 DMN2300UFB4-7B Datasheet Page 5 DMN2300UFB4-7B Datasheet Page 6 DMN2300UFB4-7B Datasheet Page 7

DMN2300UFB4-7B Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs175mOhm @ 300mA, 4.5V
Vgs(th) (Max) @ Id950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs1.6nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds64.3pF @ 25V
FET Feature-
Power Dissipation (Max)500mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageX2-DFN1006-3
Package / Case3-XFDFN

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