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FCD4N60TM_WS

FCD4N60TM_WS

For Reference Only

Part Number FCD4N60TM_WS
PNEDA Part # FCD4N60TM_WS
Description MOSFET N-CH 600V 3.9A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 5,688
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 2 - May 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FCD4N60TM_WS Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFCD4N60TM_WS
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FCD4N60TM_WS, FCD4N60TM_WS Datasheet (Total Pages: 10, Size: 554.07 KB)
PDFFCD4N60TM_WS Datasheet Cover
FCD4N60TM_WS Datasheet Page 2 FCD4N60TM_WS Datasheet Page 3 FCD4N60TM_WS Datasheet Page 4 FCD4N60TM_WS Datasheet Page 5 FCD4N60TM_WS Datasheet Page 6 FCD4N60TM_WS Datasheet Page 7 FCD4N60TM_WS Datasheet Page 8 FCD4N60TM_WS Datasheet Page 9 FCD4N60TM_WS Datasheet Page 10

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FCD4N60TM_WS Specifications

ManufacturerON Semiconductor
SeriesSuperFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.2Ohm @ 2A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs16.6nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds540pF @ 25V
FET Feature-
Power Dissipation (Max)50W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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