FDD3680
For Reference Only
| Part Number | FDD3680 |
| PNEDA Part # | FDD3680 |
| Description | MOSFET N-CH 100V 25A D-PAK |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 2,304 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 27 - Jul 2 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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FDD3680 Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | FDD3680 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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FDD3680 Specifications
| Manufacturer | ON Semiconductor |
| Series | PowerTrench® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 25A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 46mOhm @ 6.1A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 53nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1735pF @ 50V |
| FET Feature | - |
| Power Dissipation (Max) | 68W (Ta) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 179A (Tc) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs 5mOhm @ 71A, 10V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 140nC @ 4.5V Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds 5000pF @ 25V FET Feature - Power Dissipation (Max) 270W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package SUPER-220™ (TO-273AA) Package / Case TO-273AA |
