Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

FDMC86265P

FDMC86265P

For Reference Only

Part Number FDMC86265P
PNEDA Part # FDMC86265P
Description MOSFET P-CH 150V 1A MLP
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,496
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 8 - May 13 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDMC86265P Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDMC86265P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDMC86265P, FDMC86265P Datasheet (Total Pages: 8, Size: 373.47 KB)
PDFFDMC86265P Datasheet Cover
FDMC86265P Datasheet Page 2 FDMC86265P Datasheet Page 3 FDMC86265P Datasheet Page 4 FDMC86265P Datasheet Page 5 FDMC86265P Datasheet Page 6 FDMC86265P Datasheet Page 7 FDMC86265P Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • FDMC86265P Datasheet
  • where to find FDMC86265P
  • ON Semiconductor

  • ON Semiconductor FDMC86265P
  • FDMC86265P PDF Datasheet
  • FDMC86265P Stock

  • FDMC86265P Pinout
  • Datasheet FDMC86265P
  • FDMC86265P Supplier

  • ON Semiconductor Distributor
  • FDMC86265P Price
  • FDMC86265P Distributor

FDMC86265P Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C1A (Ta), 1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs1.2Ohm @ 1A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs4nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds210pF @ 75V
FET Feature-
Power Dissipation (Max)2.3W (Ta), 16W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-MLP (3.3x3.3)
Package / Case8-PowerWDFN

The Products You May Be Interested In

IRF9Z34NSTRLPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

19A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

100mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

35nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

620pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 68W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

FDMC5614P

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

5.7A (Ta), 13.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

100mOhm @ 5.7A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1055pF @ 30V

FET Feature

-

Power Dissipation (Max)

2.1W (Ta), 42W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-MLP (3.3x3.3)

Package / Case

8-PowerWDFN

IPP80N06S208AKSA2

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

8mOhm @ 58A, 10V

Vgs(th) (Max) @ Id

4V @ 150µA

Gate Charge (Qg) (Max) @ Vgs

96nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2860pF @ 25V

FET Feature

-

Power Dissipation (Max)

215W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

BSH111,215

Nexperia

Manufacturer

Nexperia USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

335mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

4Ohm @ 500mA, 4.5V

Vgs(th) (Max) @ Id

1.3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

1nC @ 8V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

40pF @ 10V

FET Feature

-

Power Dissipation (Max)

830mW (Tc)

Operating Temperature

-65°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-236AB

Package / Case

TO-236-3, SC-59, SOT-23-3

AOWF20S60

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

aMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

199mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

4.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

19.8nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1038pF @ 100V

FET Feature

-

Power Dissipation (Max)

28W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

-

Package / Case

TO-262-3 Full Pack, I²Pak

Recently Sold

RUEF500

RUEF500

Littelfuse

PTC RESET FUSE 30V 5A RADIAL

7508110151

7508110151

Wurth Electronics Midcom

WE-UNIT OFFLINE TRANSFORMER

BLM15AG221SN1D

BLM15AG221SN1D

Murata

FERRITE BEAD 220 OHM 0402 1LN

MT29F8G16ABACAWP:C

MT29F8G16ABACAWP:C

Micron Technology Inc.

IC FLASH 8G PARALLEL 48TSOP I

4N32SM

4N32SM

ON Semiconductor

OPTOISO 4.17KV DARL W/BASE 6SMD

HM0068ANL

HM0068ANL

Pulse Electronics Network

PULSE XFMR 1CT:1CT TX 1CT:1CT RX

LTM4622IV#PBF

LTM4622IV#PBF

Linear Technology/Analog Devices

DC DC CNVRTR 0.6-5.5V 0.6-5.5V

MAX4168EUB+T

MAX4168EUB+T

Maxim Integrated

IC OPAMP GP 2 CIRCUIT 10UMAX

MAX6817EUT+T

MAX6817EUT+T

Maxim Integrated

IC DEBOUNCER SWITCH DUAL SOT23-6

M24M02-DRMN6TP

M24M02-DRMN6TP

STMicroelectronics

IC EEPROM 2M I2C 1MHZ 8SO

IRLML6401TRPBF

IRLML6401TRPBF

Infineon Technologies

MOSFET P-CH 12V 4.3A SOT-23

TLP227G-2(TP1,N,F)

TLP227G-2(TP1,N,F)

Toshiba Semiconductor and Storage

SSR RELAY SPST-NO 120MA 0-350V