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FQPF8P10

FQPF8P10

For Reference Only

Part Number FQPF8P10
PNEDA Part # FQPF8P10
Description MOSFET P-CH 100V 5.3A TO-220F
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,788
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQPF8P10 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQPF8P10
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQPF8P10, FQPF8P10 Datasheet (Total Pages: 8, Size: 667.64 KB)
PDFFQPF8P10 Datasheet Cover
FQPF8P10 Datasheet Page 2 FQPF8P10 Datasheet Page 3 FQPF8P10 Datasheet Page 4 FQPF8P10 Datasheet Page 5 FQPF8P10 Datasheet Page 6 FQPF8P10 Datasheet Page 7 FQPF8P10 Datasheet Page 8

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FQPF8P10 Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs530mOhm @ 2.65A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds470pF @ 25V
FET Feature-
Power Dissipation (Max)28W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F
Package / CaseTO-220-3 Full Pack

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