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HGTG18N120BND

HGTG18N120BND

For Reference Only

Part Number HGTG18N120BND
PNEDA Part # HGTG18N120BND
Description IGBT 1200V 54A 390W TO247
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 19,692
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

HGTG18N120BND Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberHGTG18N120BND
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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HGTG18N120BND Specifications

ManufacturerON Semiconductor
Series-
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)54A
Current - Collector Pulsed (Icm)160A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 18A
Power - Max390W
Switching Energy1.9mJ (on), 1.8mJ (off)
Input TypeStandard
Gate Charge165nC
Td (on/off) @ 25°C23ns/170ns
Test Condition960V, 18A, 3Ohm, 15V
Reverse Recovery Time (trr)75ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247-3

The Products You May Be Interested In

Manufacturer

IXYS

Series

GenX3™, XPT™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

80A

Current - Collector Pulsed (Icm)

180A

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 40A

Power - Max

300W

Switching Energy

860µJ (on), 400µJ (off)

Input Type

Standard

Gate Charge

70nC

Td (on/off) @ 25°C

26ns/106ns

Test Condition

400V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr)

120ns

Operating Temperature

-

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247 (IXYH)

Manufacturer

IXYS

Series

GenX3™, XPT™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

100A

Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 36A

Power - Max

600W

Switching Energy

720µJ (on), 330µJ (off)

Input Type

Standard

Gate Charge

64nC

Td (on/off) @ 25°C

24ns/62ns

Test Condition

360V, 36A, 5Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247 (IXXH)

STGWA40H120DF2

STMicroelectronics

Manufacturer

STMicroelectronics

Series

-

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

80A

Current - Collector Pulsed (Icm)

160A

Vce(on) (Max) @ Vge, Ic

2.6V @ 15V, 40A

Power - Max

468W

Switching Energy

1mJ (on), 1.32mJ (off)

Input Type

Standard

Gate Charge

158nC

Td (on/off) @ 25°C

18ns/152ns

Test Condition

600V, 40A, 10Ohm, 15V

Reverse Recovery Time (trr)

488ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247-3

IKP15N65H5XKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

TrenchStop®

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

30A

Current - Collector Pulsed (Icm)

45A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 15A

Power - Max

105W

Switching Energy

120µJ (on), 50µJ (off)

Input Type

Standard

Gate Charge

38nC

Td (on/off) @ 25°C

17ns/160ns

Test Condition

400V, 7.5A, 39Ohm, 15V

Reverse Recovery Time (trr)

48ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

PG-TO220-3

Manufacturer

IXYS

Series

XPT™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

2500V

Current - Collector (Ic) (Max)

28A

Current - Collector Pulsed (Icm)

80A

Vce(on) (Max) @ Vge, Ic

4.5V @ 15V, 12A

Power - Max

310W

Switching Energy

3.56mJ (on), 1.7mJ (off)

Input Type

Standard

Gate Charge

56nC

Td (on/off) @ 25°C

12ns/167ns

Test Condition

1250V, 12A, 10Ohm, 15V

Reverse Recovery Time (trr)

16ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247 (IXYH)

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