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STGWA40H120DF2

STGWA40H120DF2

For Reference Only

Part Number STGWA40H120DF2
PNEDA Part # STGWA40H120DF2
Description TRENCH GATE IGBT TO247 PKG
Manufacturer STMicroelectronics
Unit Price
1 ---------- $54.4938
100 ---------- $51.9394
250 ---------- $49.3850
500 ---------- $46.8306
750 ---------- $44.7020
1,000 ---------- $42.5733
In Stock 3,040
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 6 - May 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STGWA40H120DF2 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTGWA40H120DF2
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
STGWA40H120DF2, STGWA40H120DF2 Datasheet (Total Pages: 17, Size: 819.58 KB)
PDFSTGWA40H120DF2 Datasheet Cover
STGWA40H120DF2 Datasheet Page 2 STGWA40H120DF2 Datasheet Page 3 STGWA40H120DF2 Datasheet Page 4 STGWA40H120DF2 Datasheet Page 5 STGWA40H120DF2 Datasheet Page 6 STGWA40H120DF2 Datasheet Page 7 STGWA40H120DF2 Datasheet Page 8 STGWA40H120DF2 Datasheet Page 9 STGWA40H120DF2 Datasheet Page 10 STGWA40H120DF2 Datasheet Page 11

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STGWA40H120DF2 Specifications

ManufacturerSTMicroelectronics
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)80A
Current - Collector Pulsed (Icm)160A
Vce(on) (Max) @ Vge, Ic2.6V @ 15V, 40A
Power - Max468W
Switching Energy1mJ (on), 1.32mJ (off)
Input TypeStandard
Gate Charge158nC
Td (on/off) @ 25°C18ns/152ns
Test Condition600V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr)488ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247-3

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Gate Charge

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Td (on/off) @ 25°C

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Test Condition

400V, 60A, 4.7Ohm, 15V

Reverse Recovery Time (trr)

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Package / Case

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Microsemi

Manufacturer

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Series

Thunderbolt IGBT®

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Test Condition

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Supplier Device Package

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Manufacturer

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Mounting Type

-

Package / Case

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Supplier Device Package

-

Manufacturer

IXYS

Series

BIMOSFET™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1700V

Current - Collector (Ic) (Max)

16A

Current - Collector Pulsed (Icm)

40A

Vce(on) (Max) @ Vge, Ic

6V @ 15V, 10A

Power - Max

150W

Switching Energy

1.2mJ (off)

Input Type

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Gate Charge

65nC

Td (on/off) @ 25°C

15ns/160ns

Test Condition

1360V, 10A, 10Ohm, 15V

Reverse Recovery Time (trr)

360ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD (IXBH)

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