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IAUS200N08S5N023ATMA1

IAUS200N08S5N023ATMA1

For Reference Only

Part Number IAUS200N08S5N023ATMA1
PNEDA Part # IAUS200N08S5N023ATMA1
Description MOSFET N-CH 80V 200A PG-HSOG-8-1
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,250
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IAUS200N08S5N023ATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIAUS200N08S5N023ATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IAUS200N08S5N023ATMA1, IAUS200N08S5N023ATMA1 Datasheet (Total Pages: 9, Size: 225.88 KB)
PDFIAUS200N08S5N023ATMA1 Datasheet Cover
IAUS200N08S5N023ATMA1 Datasheet Page 2 IAUS200N08S5N023ATMA1 Datasheet Page 3 IAUS200N08S5N023ATMA1 Datasheet Page 4 IAUS200N08S5N023ATMA1 Datasheet Page 5 IAUS200N08S5N023ATMA1 Datasheet Page 6 IAUS200N08S5N023ATMA1 Datasheet Page 7 IAUS200N08S5N023ATMA1 Datasheet Page 8 IAUS200N08S5N023ATMA1 Datasheet Page 9

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IAUS200N08S5N023ATMA1 Specifications

ManufacturerInfineon Technologies
SeriesAutomotive, AEC-Q101, OptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs2.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id3.8V @ 130µA
Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7670pF @ 40V
FET Feature-
Power Dissipation (Max)200W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-HSOG-8-1
Package / Case8-PowerSMD, Gull Wing

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