IKW25T120FKSA1
For Reference Only
| Part Number | IKW25T120FKSA1 |
| PNEDA Part # | IKW25T120FKSA1 |
| Description | IGBT 1200V 50A 190W TO247-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 6,744 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 29 - May 4 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IKW25T120FKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IKW25T120FKSA1 |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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IKW25T120FKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | TrenchStop® |
| IGBT Type | NPT, Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 50A |
| Current - Collector Pulsed (Icm) | 75A |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 25A |
| Power - Max | 190W |
| Switching Energy | 4.2mJ |
| Input Type | Standard |
| Gate Charge | 155nC |
| Td (on/off) @ 25°C | 50ns/560ns |
| Test Condition | 600V, 25A, 22Ohm, 15V |
| Reverse Recovery Time (trr) | 200ns |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | PG-TO247-3 |
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Manufacturer ON Semiconductor Series - IGBT Type Field Stop Voltage - Collector Emitter Breakdown (Max) 650V Current - Collector (Ic) (Max) 160A Current - Collector Pulsed (Icm) 160A Vce(on) (Max) @ Vge, Ic 2V @ 15V, 50A Power - Max 417W Switching Energy 420µJ (on), 550µJ (off) Input Type Standard Gate Charge 215nC Td (on/off) @ 25°C 23ns/123ns Test Condition 400V, 50A, 10Ohm, 15V Reverse Recovery Time (trr) 94ns Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-247-4 Supplier Device Package TO-247-4L |
Manufacturer IXYS Series BIMOSFET™ IGBT Type - Voltage - Collector Emitter Breakdown (Max) 3000V Current - Collector (Ic) (Max) 50A Current - Collector Pulsed (Icm) 140A Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 20A Power - Max 250W Switching Energy - Input Type Standard Gate Charge 105nC Td (on/off) @ 25°C - Test Condition - Reverse Recovery Time (trr) 1.35µs Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Supplier Device Package TO-268 |
