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IPB06CN10N G

IPB06CN10N G

For Reference Only

Part Number IPB06CN10N G
PNEDA Part # IPB06CN10N-G
Description MOSFET N-CH 100V 100A TO263-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,716
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB06CN10N G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB06CN10N G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPB06CN10N G, IPB06CN10N G Datasheet (Total Pages: 11, Size: 770.86 KB)
PDFIPI06CN10N G Datasheet Cover
IPI06CN10N G Datasheet Page 2 IPI06CN10N G Datasheet Page 3 IPI06CN10N G Datasheet Page 4 IPI06CN10N G Datasheet Page 5 IPI06CN10N G Datasheet Page 6 IPI06CN10N G Datasheet Page 7 IPI06CN10N G Datasheet Page 8 IPI06CN10N G Datasheet Page 9 IPI06CN10N G Datasheet Page 10 IPI06CN10N G Datasheet Page 11

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IPB06CN10N G Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs6.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id4V @ 180µA
Gate Charge (Qg) (Max) @ Vgs139nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds9200pF @ 50V
FET Feature-
Power Dissipation (Max)214W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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